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Write energy conservation in memory

A memory, memory cell technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as increasing the probability of successful write operations

Active Publication Date: 2015-08-05
QUALCOMM INC
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The length of time the current is applied controls the probability of a successful write operation, with longer write operations increasing the probability of a successful write operation

Method used

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Embodiment Construction

[0016] The present invention relates to reducing power consumption when writing data to a memory, such as a resistive memory. Although the following description refers to resistive memories, the teachings are also applicable to other forms of memories where direct current flows in one mode of operation. Exemplary types of resistive memory include magnetic random access memory (MRAM), phase change (PC) memory, and solid electrolyte memory. These types of memories have a wide variety of uses, including incorporation into wireless communication systems and devices . . . among others.

[0017] figure 1 A block diagram illustrating an exemplary wireless communication system 100 that may advantageously use such memory is presented. For illustrative purposes, figure 1 Three remote units 120, 130, and 150 and two base stations 140 are shown. It should be appreciated that a wireless communication system may have many more remote units and base stations. Remote units 120, 130, and ...

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Abstract

A method writes data to a resistive memory, such as spin torque transfer magnetic random access memory (STT-MRAM). The method writes received bits of data to a memory cell array, in response to a first write signal. The method also reads stored data from the memory cell array, after the first write signal is generated, and then compares the stored data with the received bits of data to determine whether each of the received bits of data was written to the memory. In response to a second write signal, received bits of data determined not to have been written during the first write signal, are written.

Description

technical field [0001] The present invention generally relates to electronic memory. More particularly, the present invention relates to efficiently writing data to resistive memories, such as Magnetic Random Access Memory (MRAM). Background technique [0002] To write data into any resistance-based memory, direct current typically flows through the memory for a period of time. To save power, (eg, with battery powered or "green" devices) the amount of current and / or the length of time that current flows should be reduced. The current must be strong enough to change the state of a memory cell of a resistance-based memory. The length of time the current is applied controls the probability of a successful write operation, with longer write operations increasing the probability of a successful write operation. Contents of the invention [0003] The lower power for write operations results from a three-phase write operation. A first write signal with a short write pulse wri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16
CPCG11C11/16G11C11/1675G11C11/1693
Inventor 哈里·M·拉奥金正丕金太贤朱晓春李康浩郝武扬
Owner QUALCOMM INC