Electroluminescence device and its preparation method
A technology of electroluminescent devices and light-emitting layers, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, and electrical components, and can solve the problems of high barriers of aluminum anodes and hole transport layers, so as to improve luminous efficiency and reduce potential Barrier, the effect of starting voltage reduction
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[0039] The embodiment of the present invention further provides the above electroluminescent device preparation method, comprising the following steps:
[0040] Step S01, preparing an anode
[0041] Forming an aluminum anode on the substrate by vacuum evaporation, sputtering or spin coating to obtain a substrate containing an aluminum anode;
[0042] Step S02, preparing a modification layer
[0043] The perfluoro fatty acid is dissolved in hexadecane to form the first solution, the substrate containing the aluminum anode is soaked in the first solution, and dried with nitrogen flow to form a modified layer on the anode. The perfluoro fatty acid is passed through Formula is CF 3 (CF 2 ) n -COOH, wherein n is selected from any natural number from 2 to 14;
[0044] Step S03, preparing a hole transport layer
[0045] Forming a hole transport layer on the modification layer by vacuum evaporation, sputtering or spin coating;
[0046] Step S04, preparing a light-emitting layer...
Embodiment 1
[0065] The method for preparing an electroluminescent device according to an embodiment of the present invention includes the following steps:
[0066] Put the PET film with a thickness of 0.175mm in deionized water containing detergent for ultrasonic cleaning, then use isopropanol and acetone in ultrasonic treatment in turn, and dry it with nitrogen after completion;
[0067] On the surface of the flexible substrate, an Al film is formed by vacuum thermal evaporation, the thickness of the Al film is 60nm, and the substrate containing the aluminum film is obtained;
[0068] Perfluorobutyric acid (CF 3 (CF 2 ) 2 -COOH) was dissolved in hexadecane to make a solution with a concentration of 0.5mM, and then the prepared aluminum-containing film substrate was soaked in the solution for 10 minutes; after completion, it was taken out and dried with nitrogen, and formed on the aluminum film. retouching layer;
[0069] Forming a hole transport layer made of α-NPD and having a thick...
Embodiment 2
[0076] The method for preparing an electroluminescent device according to an embodiment of the present invention includes the following steps:
[0077] Put the PI film with a thickness of 0.15mm in deionized water containing detergent for ultrasonic cleaning, then use isopropanol and acetone in ultrasonic treatment in turn, and dry it with nitrogen after completion;
[0078] On the surface of the flexible substrate, an Al film is formed by vacuum thermal sputtering, the thickness of the Al film is 80nm, and the substrate containing the aluminum film is obtained;
[0079] Perfluorohexadecanoic acid (CF 3 (CF 2 ) 14 -COOH) was dissolved in hexadecane to make a solution with a concentration of 1mM, and then the prepared aluminum-containing film substrate was soaked in the solution for 8 minutes; after completion, it was taken out and dried with nitrogen to form a modified aluminum film. layer;
[0080] Forming a hole transport layer made of α-NPD and having a thickness of 20 ...
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