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Semiconductor devices and integrated circuits

A semiconductor and device technology, applied in the field of semiconductor devices and integrated circuits, can solve problems such as prominent influence, and achieve the effects of reducing parasitic capacitance and reducing effective relative area

Active Publication Date: 2017-02-08
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention provides a semiconductor device and an integrated circuit to achieve the purpose of reducing parasitic capacitance, so as to solve the problem that the above-mentioned parasitic capacitance has a prominent influence on large-scale integrated circuits

Method used

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  • Semiconductor devices and integrated circuits
  • Semiconductor devices and integrated circuits
  • Semiconductor devices and integrated circuits

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Embodiment Construction

[0028] The core idea of ​​the present invention is that for two metal wires parallel to each other in a semiconductor device, the metal wires are arranged to include a first metal layer with at least one gap, a metal plug, and a second metal layer. The two metal layers are connected to the first metal layer through the metal plug, and the gap positions of the two metal connections are at least partially staggered. Because the gap positions of the two metal wires are at least partially staggered with each other, the effective relative area of ​​the parasitic capacitance generated by the two metal wires is greatly reduced, so that the purpose of reducing the parasitic capacitance can be achieved.

[0029] In order to facilitate the description of the specific implementation of the present invention, a transistor is taken as an example below for description. It should be understood that the metal wiring of the semiconductor device of the present invention can be applied to various s...

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Abstract

The invention provides a semiconductor device and an integrated circuit. The semiconductor device comprises two parallel metal connecting wires, wherein each metal connecting wire is provided with a first metal layer provided with at least one gap, a metal plug and a second metal layer formed on the gap, each second metal layer is connected with each first metal layer through each metal plug, and at least part of gap positions of the two metal connecting wires are staggered mutually. Due to adoption of the semiconductor device, the parasitic capacitance generated by the two metal connecting wires can be greatly reduced.

Description

Technical field [0001] The invention belongs to the field of semiconductor manufacturing, and particularly relates to a semiconductor device and an integrated circuit. Background technique [0002] With the increasing integration of integrated circuits, the number of integrated semiconductor devices in integrated circuits is also increasing. In order to achieve certain functions, integrated circuits need to connect related semiconductor devices to each other. Usually, semiconductor devices are formed There are metal wires, which are then connected to the metal wires by external interconnection wires to connect related semiconductor devices. [0003] Such as figure 1 As shown, a semiconductor device 100 in the prior art includes: a substrate 101, an active region 102 formed in the substrate 101, a gate 103 formed on the active region 102, two gates 103 formed on the gate 103 The first metal connection 104 and the second metal connection 105 on the side substrate 101. [0004] Such a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/528
Inventor 李乐
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP