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Method and system for growing lead iodide single crystals

A lead iodide, single crystal technology, applied in the field of growing lead iodide single crystal, can solve the problem of molar ratio deviating from the ideal stoichiometric ratio and the like

Inactive Publication Date: 2015-03-04
XIHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Therefore, the atomic molar ratio of lead and iodine in the lead iodide single crystal obtained by the existing method for growing lead iodide deviates from the ideal stoichiometric ratio

Method used

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  • Method and system for growing lead iodide single crystals
  • Method and system for growing lead iodide single crystals
  • Method and system for growing lead iodide single crystals

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Embodiment Construction

[0023] The technical solutions of the various embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0024] The invention provides a method for growing a lead iodide single crystal, comprising placing a lead iodide seed crystal and melting and crystallization of a lead iodide precast ingot,

[0025] The placing of the lead iodide seed crystal is: placing the lead iodide seed crystal above the lead iodide pre-cast ingot and contacting the lead iodide pre-cast ingot, wherein the lead iodide seed The atomic molar ratio of lead and iodine in the crystal and the lead iodide pre-cast ing...

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Abstract

The invention relates to the field of materials physics and chemistry, in particular to a method and system for growing lead iodide single crystals, which are capable of steadily obtaining lead iodide single crystals with high purity and accordance of stoichiometry. The method comprises the following steps of placing lead iodide seed crystals, melting lead iodide precasting ingots, crystallizing, and placing the lead iodide seed crystals on the lead iodide precasting ingots in a contact way, wherein the atom mole ratio of lead and iodic in the lead iodide seed crystals and the lead iodide precasting ingots is 1:1.95 to 1:2.05; during melting and crystallizing, the lead iodide seed crystals are kept in solid state, the lead iodide precasting ingots are heated from top to bottom in sequence in the vertical direction so as to be melted into liquid lead iodide from top to bottom in sequence, and the liquid lead iodide is enabled to crystallize during the melting and crystallizing; the temperature of the liquid lead iodide is 410-450 DEG C, and the temperature gradient of the crystallization interfaces between the liquid lead iodide and the lead iodide single crystals or between the liquid lead iodide and crystallized solid liquid lead is enabled to be 5-30 DEG C / cm.

Description

technical field [0001] The invention relates to the fields of material physics and chemistry, in particular to a method and system for growing lead iodide single crystals. Background technique [0002] Lead iodide (PbI 2 ) single crystal is one of the materials for making room temperature x-ray (or gamma ray) detectors, devices made of lead iodide single crystal can work at room temperature or even higher temperature range. There are extremely high requirements for the integrity of the lead iodide single crystal used to make detectors: firstly, the single crystal is required to have extremely high purity to eliminate defects caused by impurity atoms in the single crystal; secondly, it is required to strictly comply with the chemical ratio to eliminate atomic vacancies cause crystal defects. [0003] In the prior art, the methods for growing lead iodide single crystal mainly include gas phase method and melt method, and among the melt methods, the vertical Bridgman method i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B13/00C30B13/14
Inventor 贺毅金应荣王兰陈宝军何知宇栾道成盛得雪张洁
Owner XIHUA UNIV
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