High-performance broadband bootstrap excitation tube core structure

Abstract

The invention discloses a high-performance broadband bootstrap excitation tube core structure. One end of a first resistor R1 and one end of a first capacitor C1 are radio frequency input ends, and the other end of the first resistor R1 and the other end of the first capacitor C1 are connected with a base of a first transistor M1; a collector of the first transistor M1 is connected with an emitter of a second transistor M2; the emitter of the first transistor M1 is grounded; the collector of the second transistor M2 is divided into three channels, one channel serves as a radio frequency output end and outputs a radio frequency signal, one channel is connected with voltage drain-drain (VDD), and the other channel is connected with one end of a third capacitor C3; the other end of the third capacitor C3 is connected with the base of the second transistor M2, one end of a second resistor R2 and one end of a second capacitor C2; and the other end of the second resistor R2 is connected with gate voltage (Vg), and the other end of the second capacitor C2 is grounded. The high-performance broadband bootstrap excitation tube core structure is high in output power, high in efficiency and high in stability.

Description

technical field [0001] The invention belongs to the field of wireless communication, in particular to a high-performance broadband bootstrap excitation die structure. Background technique [0002] As the main component of wireless transmitter, monolithic integrated microwave power amplifier occupies an important position in navigation, satellite ground station, radar, electronic countermeasure equipment, and communication research. It has a wide range of applications and has developed extremely rapidly in recent years. In order to meet the requirements of higher power, higher efficiency, higher reliability and wider bandwidth for monolithic power amplifiers in various applicable fields, the development of high-voltage, high-efficiency, and high-power monolithic power amplifiers has become an inevitable trend. In the traditional MMIC power amplifier design process, the design of the die usually adopts the form of parallel connection of several BJTs. This power synthesis metho...

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Problems solved by technology

This method has its inherent limitation in bandwidth, because the optimal load impedance required by the dies in parallel is usually very small, so that the Q value of the output matching network is usually very large, so there is no bandwidth. Advantages, it is difficult to use in some power amplifiers that have strict requirements on bandwidth

At the same time, because the BJT is connected in parallel, the voltage swing of the collector output is limited by the breakdown voltage of a single transistor. In order to prevent the BJT from entering the breakdown region, it is difficult to make the voltage swing of the RF signal output by the collector very high. It also limits the further improvement of output power to a certain extent, so the traditional parallel-connected die structure is limited in terms of gain and efficiency

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