A mobile curtain door device and control method for a crystal silicon ingot furnace

Abstract

The invention discloses a movable curtain door device for a crystalline silicon ingot furnace and a control method of the device. The existing various heat-door structures have the respective limitations and cannot completely meet the requirements of the current industry on heat doors. The movable curtain door device disclosed by the invention comprises a furnace body, and a heat-isolating cage arranged in the furnace body, wherein a heat exchange table is arranged in the heat-isolating cage. The movable curtain door device is characterized in that an opening is formed in the bottom of the heat-isolating cage which is located below the heat exchange table, a movable curtain door structure with an upper part which can be opened or closed is arranged on the lower half part of the furnace body; and the movable curtain door structure comprises a heat exchange plate, a totally-enclosed annular side vertical plate which is installed on the upper surface of the heat exchange plate, as well as a left movable plate and a right movable plate which are installed on the side vertical plate, wherein the side vertical plate and the heat exchange plate form a heat exchange cavity, and the tops of the left movable plate and the right movable plate are arranged close to the bottom of the heat-isolating cage. The controllable heat door of the movable curtain door device disclosed by the invention can achieve the best effect of the existing bottom-white wiredrawing method, and can meet uniformly cooling of the heat exchange table under a small heat exchange amount, thus ensuring the smoothness and the stability of a crystal growth solid-liquid interface.

Description

technical field [0001] The invention relates to the field of special crystal manufacturing, in particular to a mobile curtain door device for a crystal silicon ingot furnace and a control method thereof. Background technique [0002] The preparation of crystalline silicon solar cells by heat exchange method has become the most important technical means in today's vigorous development of the photovoltaic industry. Integrating the development direction of existing technologies, crystalline silicon solar cells are more and more inclined to how to obtain higher conversion efficiency. High-efficiency multi-wafer and quasi-monocrystalline wafers. [0003] The study found that high-efficiency multi-chips have structural characteristics such as suitable nucleation size, uniform grain distribution, high-quality orientation, high orientation perpendicularity, good grain continuity, and low dislocation density. It was further found that in the nucleation stage of crystals, a thermal f...

AI Technical Summary

Problems solved by technology

[0021] The third type of popular bottom screen pull-out structure can only realize one-time opening and closing in one direction during the ingot casting process, which cannot effectively adjust the temperature of the thermal field, and at the same time, the loss of energy consumption is often large

[0022] The fourth bottom screen louver rotation method is controlled by louver rotation, which can effectively adjust the radiation area on the heat exchange platform. However, due to the thickness of the louver itself on the heat exchange plate and the heat exchange platform, The radiation channel between them is also blocked, which reduces the radiation uniformity and the maximum heat dissipation area of ​​the lower surface of the heat exchange platform above

[0023] Combined with the development needs of the current silicon wafer preparation technology, it can be seen that the above four popular methods have their own limitations and cannot fully meet the current industry's requirements for hot topics

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