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Access Control Methods for Data Storage

An access control and data storage technology, applied in the direction of memory address/allocation/relocation, input/output to the record carrier, etc., can solve the problem of low reliability, insufficient original information redundancy bits to store data, etc., to save Effect of time required for read and write access

Active Publication Date: 2016-05-25
XIAMEN IND TECH RES INST CO LTD
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, for some NANDFLASH with relatively low reliability or higher requirements for data reliability, more redundant bits are needed to achieve the corresponding reliability requirements. In this case, each NANDFLASH The page is not enough to store the original information and all redundant bits of the data of a page

Method used

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  • Access Control Methods for Data Storage
  • Access Control Methods for Data Storage
  • Access Control Methods for Data Storage

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Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0031] in such as Figure 1a and Figure 1b In the shown embodiment one, the storage architecture includes at least two NANDFLASH packages 1~n (n in the first embodiment is a positive integer greater than or equal to 2), and each NANDFLASH package is divided into a data storage area and a redundancy remaining storage areas; and, the access control method for data storage in Embodiment 1 includes:

[0032] When performing write operations on the above storage architecture, see Figure 1a , write the original information of the data to the data storage area in one of the NANDFLASH packages i (i in the first embodiment is a positive integer greater than or equal to 1 and less than or equal to n), and at the same time write the redundant bits of the data to...

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Abstract

The invention discloses an access control method for data storage, wherein a data storage area and a redundancy storage area are divided in each package or each storage unit or each BANK; therefore, the original information and the redundancy bits of data are stored in the corresponding data storage areas and the corresponding redundancy storage areas respectively in a distributive storage way, without necessity of centralized storage in one page; in such a way, enough storage space can be provided for the storage of the original information and the redundancy bits of the data; moreover, with the adoption of the access control method for the data storage, the data storage areas and the redundancy storage areas respectively corresponding to the original information and the redundancy bit of the same datum are located in the various packages or the various storage units or the various BANKs; therefore, the reading-writing access to the same datum can be realized through the synchronous reading-writing of the various packages, or the various storage units, or the various BANKs; and finally, the required time for the reading-writing access can be saved, so that no decrease of storage performance resulting from the distributive storage can be guaranteed.

Description

technical field [0001] The invention relates to data storage technology, in particular to an access control method for data storage. Background technique [0002] In the existing technology, NANDFLASH (and non-flash memory)-based SSD (SolidStateDisk, solid-state disk) data storage system benefits from high throughput, low power consumption, shock resistance, high stability, low temperature resistance, low heat generation, and low operating noise And many other advantages, it has broad application prospects in the fields of enterprise high-performance computers, military and industry, personal computers, ultra-low-cost personal computers, and enterprise computers. [0003] However, with the shrinking of the NANDFLASH process size and the application of MLC (Multi-LevelCell, multi-layer cell) technology, serious reliability problems have occurred in NANDFLASH. Therefore, in the prior art, error correction code technology is usually used to solve the reliability problem of NAN...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/06G06F3/06
Inventor 潘立阳麻昊志邹宏飞
Owner XIAMEN IND TECH RES INST CO LTD