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Plasma monitoring and minimizing stray capacitance

A plasma and plasma technology, applied in the field of plasma processing chambers, can solve problems such as difficulties in plasma monitoring

Inactive Publication Date: 2013-04-03
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In CCP processing chambers, RF grounding is the source of many problems, such as stray capacitance and difficulties in plasma monitoring

Method used

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  • Plasma monitoring and minimizing stray capacitance
  • Plasma monitoring and minimizing stray capacitance
  • Plasma monitoring and minimizing stray capacitance

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Embodiment Construction

[0017] The present invention generally relates to a CCP processing chamber, a method of reducing or preventing stray capacitance and a method for measuring the state of a plasma in a processing chamber. Due to the increase in size of the CCP processing chamber, stray capacitance has a tendency to negatively affect the process. Also, the RF ground strap may break. Stray capacitance can be minimized by increasing the space between the cavity backplate and cavity walls. Furthermore, the plasma can be monitored by measuring the state of the plasma at the backplane rather than at the matching network. In such measurements, harmonic data of the plasma can be analyzed to reveal the state of the plasma processing in the chamber.

[0018] The embodiments discussed herein may be practiced in a PECVD chamber available from AKT USA, a subsidiary of Applied Materials, Inc. of Santa Clara, California. It will be appreciated that the embodiments discussed herein may be implemented in othe...

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Abstract

The present invention generally relates to a capacitively coupled plasma (CCP) processing chamber, a manner to reduce or prevent stray capacitance, and a manner to measure plasma conditions within the processing chamber. As CCP processing chambers increase in size, there is a tendency for stray capacitance to negatively impact the process. Additionally, RF ground straps may break. By increasing the spacing between the chamber backing plate and the chamber wall, stray capacitance may be minimized. Additionally, the plasma may be monitored by measuring the conditions of the plasma at the backing plate rather than at the match network. In so measuring, the plasma harmonic data may be analyzed to reveal plasma processing conditions within the chamber.

Description

technical field [0001] Embodiments of the present invention generally relate to a capacitively coupled plasma (CCP) processing chamber, a method for reducing or preventing stray capacitance, and a method for measuring plasma conditions within the processing chamber method. Background technique [0002] Most, if not all computers and televisions manufactured are flat panel displays (FPDs). Some FPDs are quite large and nearly all are larger than semiconductor chips used in modern personal computers. To fabricate FPDs, large-area process chambers (that is, process chambers with dimensions greater than about 1600 cm 2 surface area) rather than the smaller cavities typically used to fabricate semiconductor chips (ie, fabricated in sizes for processing substrates up to about 450 mm in diameter). The large area processing chamber is sized to process large area substrates that can later be sliced ​​into several FPDs. [0003] One type of large area processing chamber is a plasm...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/505C23C16/52H01J37/244
CPCH01J37/32183H01J37/32091H05H1/46H01J37/32935
Inventor 白宗薰S·H·金朴范洙约翰·M·怀特栗田真一杨晓玲
Owner APPLIED MATERIALS INC