Semiconductor structure and manufacturing method thereof

Abstract

The invention provides a manufacturing method of a semiconductor structure. The method comprises the steps of providing a semiconductor substrate; forming an insulating layer on the semiconductor substrate, forming a semiconductor base on the insulating layer; forming a sacrificial layer and a side wall encircling the sacrificial layer on the semiconductor base, taking the side wall as a mask to etch the semiconductor base, so as to form a semiconductor base body; forming an insulating film at the lateral wall of the semiconductor base body; and removing the sacrificial layer and the semiconductor base body below the sacrificial layer, and forming a first semiconductor fin and a second semiconductor fin. Correspondingly, the semiconductor structure is also provided by the invention. The insulating films exist at the divergent lateral walls of the two semiconductor fins, and only corresponding lateral walls of the two semiconductor fins are exposed, so that common operation on the corresponding lateral walls becomes easy to operate in the subsequent process.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] In semiconductor technology, around the overall idea of ​​how to realize fully depleted devices, the focus of research and development has shifted to three-dimensional device structures. The three-dimensional device structure is to form semiconductor fins (for forming channels) on silicon-on-insulator (SOI), form channel regions in the middle of semiconductor fins, form gates on the side walls of semiconductor fins, and form semiconductor fins on the semiconductor fins. Source / drain regions are formed at both ends of the sheet. [0003] At present, the three-dimensional device structure has a double-fin structure, that is, two parallel semiconductor fins are formed on SOI, and the two parallel semiconductor fins are used as fin-shaped channels to form two independent semiconductor ...

AI Technical Summary

Problems solved by technology

[0004] If it is desired to process the exposed sidewalls of the two semiconductor fins, it is first necessary to use materials such as photoresist to cover the sidewalls of the two semiconductor fins facing away from each other for protection. However, since the semiconductor fins The thickness of the fins is usually very thin, and it is difficult to accurately cover the sidewalls of the two semiconductor fins facing away from each other.

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