Sapphire epitaxial wafer structure and manufacturing method thereof

Abstract

The invention provides a sapphire epitaxial wafer structure. The sapphire epitaxial wafer structure comprises a sapphire substrate, a buffer layer arranged on the sapphire substrate, an intrinsic GaN layer arranged on the buffer layer, an N-type GaN layer arranged on the intrinsic GaN layer, an MQW (Multiple Quantum Well) luminous layer arranged on the N-type GaN layer, and a P-type GaN layer arranged on the MQW luminous layer, wherein the buffer layer comprises a Ge-doped InN layer, a Ge-doped GaN layer, a first GaN layer and a second GaN layer which are sequentially arranged on the sapphire substrate, wherein the first GaN layer is formed at 500-600 DEG C, and the second GaN layer is formed at 1000-1100 DEG C. The invention also provides a manufacturing method of a sapphire epitaxial wafer; and a double-step epitaxial growth method is adopted for manufacturing the buffer layer, and a small amount of Ge is doped in InN of the buffer layer and spreads to InN gaps so that stress generated by the lattice mismatch between a sapphire and the GaN can be effectively reduced, and the luminous efficiency of a quantum is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor lighting devices, in particular to a sapphire epitaxial wafer structure and a manufacturing method thereof. Background technique [0002] As the third generation of lighting, LED lighting has the advantages of low power consumption, energy saving, environmental protection and long life, and GaN-based semiconductor materials in the third generation of semiconductor materials have attracted wide attention. Group III nitrides (III-V compounds) including GaN, InN, AlN and ternary and quaternary solid solutions are all direct bandgap wide bandgap materials, and their bandgap ranges from 0.7eV of InN to 6.28eV of AlN, GaN-based Semiconductor materials have become the material system with the widest band gap, and have been widely used in optoelectronic devices in blue, green, and ultraviolet bands. The quality of GaN crystal directly affects its luminous efficiency, so growing high-quality GaN has...

AI Technical Summary

Problems solved by technology

[0005] The present invention solves the problem of lattice mismatch caused by directly growing GaN on a sapphire substrate in the prior art, thereby providing a sapphire epitaxial wafer structure and a manufacturing method thereof that reduce lattice mismatch and defects

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