Electro-migration early warning circuit of integrated circuit

An integrated circuit, electromigration technology, applied in the direction of measuring current/voltage, measuring electricity, measuring electrical variables, etc., can solve the problem of not realizing early warning, etc., to improve the efficiency of early warning, ensure trouble-free working time, and improve the success rate of tasks. Effect

Active Publication Date: 2013-04-10
FIFTH ELECTRONICS RES INST OF MINIST OF IND & INFORMATION TECH
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] Based on this, it is necessary to provide an electromigration early warning circuit for integrated circuits in view of the technical pro

Method used

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  • Electro-migration early warning circuit of integrated circuit
  • Electro-migration early warning circuit of integrated circuit
  • Electro-migration early warning circuit of integrated circuit

Examples

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[0046] The present invention will be further described in detail below in conjunction with the drawings and specific embodiments.

[0047] An integrated circuit electromigration early warning circuit, including a current monitoring structure, the current monitoring structure includes: a current output module electrically connected to a monitoring metal wire, and an oxide layer of the integrated circuit wrapped and connected to the monitoring metal wire One or more conductive metals that are electrically insulated, the current output module includes at least one current source, the conductive metal is electrically interconnected with the output end of the current monitoring structure, and the conductive metal surrounds the monitoring metal wire.

[0048] When the current output module outputs current to the monitoring metal wire, when the monitoring metal wire undergoes electromigration and causes the formation of whiskers, the whiskers will form a short circuit with at least one of ...

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Abstract

The invention relates to the relative technical filed of integrated circuits, in particular to an electro-migration early warning circuit of an integrated circuit. The electro-migration early warning circuit of the integrated circuit comprises a current output module and one piece or more than one piece of electric conduction metal, wherein the current output module and is in electrical connection with a monitoring metal wire, and the electric conduction metal is wrapped by an oxide layer of the integrated circuit and is in electrical insulation with the monitoring metal wire. The current output module comprises at least one current source, the electric conduction metal and an output end of a current monitoring structure are mutually connected in an electrical mode, and the electric conduction metal encircles the monitoring metal wire. The electro-migration early warning circuit of the integrated circuit achieves the early warning to the failed phenomenon caused by short circuit because of electro-migration, and at the same tine, the electro-migration early warning circuit of the integrated circuit also can be additionally provided with a resistance early warning structure, and therefore the electro-migration early warning circuit can monitor whether resistance is increased or a whisker causes the short circuit. Therefore, early warning efficiency of the electro-migration phenomenon is largely improved.

Description

technical field [0001] The invention relates to the related technical field of integrated circuits, in particular to an electromigration early warning circuit of integrated circuits. Background technique [0002] Integrated circuits of Metal Oxide Semiconductor (MOS) devices are widely used in various industries, and the reliability problems caused by the degradation of electrical characteristics during production and use have become more and more prominent. The progress and upgrading of integrated circuit technology are marked by the reduction of the minimum metal wire size and the improvement of chip integration. With the rapid development of modern electronic technology, the size of electronic components and device groups has entered the nanometer level, and its metal interconnection occupies an increasing area in the entire integrated circuit chip. The electromigration (EM) failure problem of metal interconnection has become a bottleneck restricting the development of l...

Claims

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Application Information

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IPC IPC(8): G01R31/30G01R19/165
CPCG01R31/30G01R31/2856G01R31/2853
Inventor 陈义强恩云飞黄云陆裕东肖庆中
Owner FIFTH ELECTRONICS RES INST OF MINIST OF IND & INFORMATION TECH
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