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Semiconductor device and method of manufacture thereof

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as complex manufacturing process and high cost

Active Publication Date: 2013-04-10
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In the semiconductor device disclosed in Patent Document 1, the connection terminal is fixed on the wiring pattern, so the manufacturing process is complicated.
As a result, the semiconductor device disclosed in Patent Document 1 is a high-cost

Method used

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  • Semiconductor device and method of manufacture thereof
  • Semiconductor device and method of manufacture thereof
  • Semiconductor device and method of manufacture thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0025] FIG. 1 is a cross-sectional view of a semiconductor device according to Embodiment 1 of the present invention. The semiconductor device 10 includes an insulating substrate 12 . The insulating substrate 12 is made of, for example, AlN, Al 2 o 3 , SiN, etc. are formed. Wiring patterns 14 a and 14 b are formed on the insulating substrate 12 . A relay terminal 14 c is also formed on the insulating substrate 12 . The relay terminal 14c is formed of the same material as the wiring patterns 14a and 14b such that one end is fixed to the insulating substrate 12 and the other end extends upward of the insulating substrate 12 .

[0026] A rear surface pattern 16 is formed on the rear surface of the insulating substrate 12 . The rear surface pattern 16 and the wiring patterns 14a and 14b are made of aluminum with a thickness of 1 to 5 mm. The semiconductor chip 20 is fixed to the wiring pattern 14b with solder 18 . The semiconductor chip 20 is formed of, for example, an IGBT...

Embodiment approach 2

[0033] The semiconductor device and its manufacturing method according to Embodiment 2 of the present invention have many points in common with Embodiment 1, and therefore, differences from Embodiment 1 will be mainly described. 3 is a cross-sectional view of a semiconductor device according to Embodiment 2 of the present invention. The semiconductor device 50 includes a power terminal 14d. The power terminal 14 d is formed such that one end is fixed to the insulating substrate 12 and the other end extends upward of the insulating substrate 12 . The power terminal 14d is formed of aluminum which is the same material as the wiring pattern 14b. Therefore, all of the power terminal 14d, the wiring pattern 14b, the relay terminal 14c, and the rear surface pattern 16 are formed of aluminum. Furthermore, the power terminal 14d is electrically connected to the semiconductor chip 20 by the lead wire 22 .

[0034] Next, a method of manufacturing a semiconductor device according to E...

Embodiment approach 3

[0037] The semiconductor device and its manufacturing method according to Embodiment 3 of the present invention have many points in common with Embodiment 1, and therefore, differences from Embodiment 1 will be mainly described. 5 is a cross-sectional view of a semiconductor device according to Embodiment 3 of the present invention. The semiconductor device 60 includes a control circuit wiring pattern 14 e formed on the insulating substrate 12 . The control circuit wiring pattern 14e is formed of aluminum which is the same material as the wiring pattern 14b. Therefore, the control circuit wiring pattern 14e, the power terminal 14d, the wiring pattern 14b, the relay terminal 14c, and the rear surface pattern 16 are all formed of aluminum. The control circuit 34 is fixed to the control circuit wiring pattern 14e. The control circuit 34 is connected to the semiconductor chip 20 and the relay terminal 14 c by the lead wire 22 . Also, the control circuit 34 is sealed with silico...

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PUM

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Abstract

The present invention provides a semiconductor device suitable for being manufactured at a reduced cost, and a method of manufacture thereof. The semiconductor device includes an insulating substrate, a wiring pattern formed on the insulating substrate, a semiconductor chip secured to the wiring pattern, a junction terminal formed of the same material as the wiring pattern and electrically connected to the semiconductor chip, one end of the junction terminal being secured to the insulating substrate, the other end of the junction terminal extending upward away from the insulating substrate, and a control circuit for transmitting a control signal for the semiconductor chip, the control circuit being electrically connected to the junction terminal.

Description

technical field [0001] The present invention relates to a semiconductor device used in, for example, a high-power switch, and a method of manufacturing the same. Background technique [0002] Patent Document 1 discloses a semiconductor device in which a metal plate serving as a wiring pattern is formed on an insulating substrate. Connection terminals extending upward on the insulating substrate are fixed to the wiring pattern. The connection terminal is a terminal for connecting the semiconductor device to the outside. [0003] prior art literature [0004] patent documents [0005] Patent Document 1: Japanese Unexamined Patent Publication No. 2002-315357. [0006] In the semiconductor device disclosed in Patent Document 1, the connection terminals are fixed to the wiring pattern, so the manufacturing process is complicated. As a result, the semiconductor device disclosed in Patent Document 1 is expensive. Contents of the invention [0007] The present invention was ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/49H01L21/48
CPCH01L2224/48137H01L2924/19107H01L2224/73265H01L2924/13055H01L24/32H01L24/48H01L24/49H01L2224/32225H01L2224/48091H01L2224/48247H01L2924/00014H01L23/24H01L23/3121H01L23/3735H01L23/49811H01L25/162H01L25/50H01L2224/49H01L2924/181H01L23/3142H01L2924/00H01L2224/45099H01L2224/48227H01L2924/00012B22D19/00B22D21/04H01L21/4821
Inventor 大月高实小原太一后藤章
Owner MITSUBISHI ELECTRIC CORP
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