Method for measuring chip area of encapsulated power device

Abstract

The invention provides a method for measuring a chip area of an encapsulated power device. The method for measuring the chip area of the encapsulated power device comprises that heating response data of the encapsulated power device are measured; the heating response data are transformed to time data of temperature halved square root, and the time data of the temperature halved square root is matched; and the chip area is determined according to the matching result. According to the method for measuring the chip area of the encapsulated power device, the heating response data are measured and transformed to the time data of temperature halved square root, the time data of the temperature halved square root is matched and the chip area is finally computed. A complex deconvolution algorithm used by the traditional method is avoided, and correlated errors generated in the deconvolution algorithm are avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for measuring the chip area of ​​a packaged power device. Background technique [0002] With the wide application of power devices in power transmission, automotive electronics and other fields, the impact of chip area on product cost and the entire product cycle is becoming more and more important, and it is also important for the detection and quality analysis of electronic products. There is a technology for measuring the thermal contact area of ​​the chip inside the semiconductor device. By measuring the transient temperature rise curve of the semiconductor device and differentiating it, the main thermal time constant on the heat conduction path is obtained. Through the relationship between thermal time constant and thermal resistance and heat capacity, the heat transfer length L of the structure is obtained; through the obtained thermal time constant, the tem...

AI Technical Summary

Problems solved by technology

The realization of this process has the following disadvantages: ① Deconvolution algorithm is required to obtain the time constant spectrum from the transient temperature rise curve. Influence; ② It is necessary to determine the structure of each part of the device (including chip, solder and shell) corresponding to each step on the transient temperature rise curve. Usually, the measured step of the transient temperature rise curve is not obvious. To find the chip The step part of the temperature rise curve corresponding to the structure is not easy, and often has subjective factors, which will also affect the determination of the final area of ​​the chip

Images