Balanced loss achievement method for NAND FLASH

Abstract

The invention discloses a balanced loss achievement method for NAND FLASH. The balanced loss achievement method for the NAND FLASH comprises a partial balance achievement method and a global balance achievement method. The balanced loss achievement method for the NAND FLASH comprises distributing LOG blocks according to the total number of NAND FLASH blocks and requirements of system performance, aiming at the number of times of erase of each LOG block, preferentially distributing a LOG block which is the smallest in the number of times of erase as a storage block of new data to achieve the partial balance achievement method in the LOG block; and achieving global balance of steps, such as judgment and comparison by recording the LOG blocks which are relatively small in the number of times of erase into a COLD-DATA-POOL. The balanced loss achievement method for the NAND FLASH is capable of effectively avoiding imbalance of the number of times of erase of the NAND FLASH because of the COLD-DATA, and can effectively improve service life of the NAND FLASH.

Description

technical field [0001] The invention relates to an equalizing loss for NAND FLASH. Background technique [0002] NAND FLASH, as a non-volatile (simply speaking, data will not be lost without power on, which is different from the commonly used computer memory) semiconductor memory chip, has small size, low power consumption, and is not easily damaged by physical damage. The advantage is that it is a rational storage medium for mobile digital products. [0003] The structure of flash memory is composed of many blocks, each block includes a certain number of pages, each page contains a data area and a redundant area, the data area is used to store data, and the redundant area is usually used for ECC, equalization wear leveling and other software overhead functions, although it is not physically different from the others. [0004] When NAND FLASH performs a write operation, the content in the corresponding block must be cleared first, and then written, which is commonly referr...

AI Technical Summary

Problems solved by technology

[0008] In the existing implementation of equalizing loss, when there are no available blocks or few available blocks in NAND FLASH, the saved data, that is, the blocks recorded as unusable, are erased uniformly, which requires saving in actual operation. A large amount of block status information increases the difficulty and resource consumption of garbage block collection

In addition, for the infrequently updated data stored in some blocks, that is, COLD-DATA (cold data), due to infrequent data updates, these data always occupy certain fixed blocks, resulting in uneven wear of blocks in NAND FLASH Yes, some blocks are close to their useful life, but some blocks have very few erase times

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