Balanced loss achievement method for NAND FLASH
An implementation method and a balanced technology, applied in the direction of memory address/allocation/relocation, etc., can solve the problems of less erasing times, uneven wear of blocks in NANDFLASH, increasing the difficulty of garbage block recovery and resource consumption, etc.
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[0030] The invention discloses a method for NAND FLASH to realize equalization loss. The method includes a local equalization realization method and a global equalization realization method. In this method, the blocks in NAND FLASH are allocated as LOG blocks according to the total number of NAND FLASH blocks and system performance requirements. For the erasing and writing times of each LOG block, the LOG block with the lowest erasing and writing times is assigned as the new data first. The storage block is used to realize the partial balance realization method in the LOG block; according to a certain rhythm, the data block with relatively few erasing and writing times in the data block is recorded in the COLD-DATA-POOL; the block with the most erasing and writing times in the LOG block is compared with The number of erasing and writing of the block with the least number of erasing and writing in COLD-DATA-POOL. When the difference is greater than or equal to a certain threshold...
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