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Dual delivery chamber design

A chamber and processing chamber technology, applied in the direction of coating, gaseous chemical plating, metal material coating process, etc.

Inactive Publication Date: 2013-05-08
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Again, the problem with remote plasma sources is that a large proportion of the charged species generated by the plasma is recombined before reaching the wafer processing chamber

Method used

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Embodiment Construction

[0033] The present disclosure pertains to a modular precursor gas handling system for chemical vapor deposition (CVD). refer to figure 1 , shows a cross-sectional view of an embodiment of a CVD processing system 101 . The plasma processing system 101 includes a front chamber 111 , a processing chamber 121 and a showerhead 107 separating the front chamber 111 from the processing chamber 121 . System 101 also includes manifold 103 , gas box 113 , spacer ring 115 , baffle plate 119 , base 117 , insulator 129 and body 131 .

[0034]A substrate 106 , such as a semiconductor wafer, is maintained on a susceptor 117 proximate to a processing chamber 121 . The pedestal 117 is movable vertically within the processing chamber 121 to lower the pedestal 117 to a position that allows the substrate 106 to be inserted into the processing chamber 101 through a slit valve (not shown) when in the lowered position. or removed from the processing chamber 101 . When the pedestal 117 is in the l...

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Abstract

A substrate processing system includes a thermal processor or a plasma generator adjacent to a processing chamber. A first processing gas enters the thermal processor or plasma generator. The first processing gas then flows directly through a showerhead into the processing chamber. A second processing gas flows through a second flow path through the showerhead. The first and second processing gases are mixed below the showerhead and a layer of material is deposited on a substrate under the showerhead.

Description

[0001] Cross References to Related Applications [0002] This application is a continuation-in-part of U.S. Application Serial No. 12 / 908,617, entitled "Dual Delivery Chamber Design," filed October 20, 2010, the entire contents of which are incorporated by reference into this article. technical field [0003] The present invention relates to semiconductor wafer processing systems, and more particularly to a gas distribution showerhead for supplying at least two process gases to a reaction chamber of a semiconductor wafer processing system. Background technique [0004] Semiconductor wafer processing systems typically contain a processing chamber having a pedestal for supporting a semiconductor wafer within the chamber near a processing region. The chamber forms a vacuum enclosure that partially defines the processing area. A gas distribution assembly or showerhead provides one or more process gases to the process region. The gas may be heated and / or supplied with RF energ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205
CPCH01L21/02274C23C16/45565C23C16/45574C23C16/4557C23C16/5096C23C16/463H01L21/02164
Inventor P·艾文加S·巴录佳D·R·杜波依斯J·C·罗查-阿尔瓦雷斯T·诺瓦克S·A·亨德里克森Y-W·李M-Y·石L-Q·夏D·R·威蒂
Owner APPLIED MATERIALS INC