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Fin field effect transistor and manufacturing method thereof

A fin-type field effect and transistor technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as difficult circuit design

Active Publication Date: 2016-01-13
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, challenges remain in applying such components and processes in complementary metal-oxide-semiconductor (CMOS) fabrication
For example, flexible circuit design is difficult to achieve using FinFETs since it is feasible for FinFET fabrication to form FinFETs from multiple identical fins

Method used

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  • Fin field effect transistor and manufacturing method thereof
  • Fin field effect transistor and manufacturing method thereof
  • Fin field effect transistor and manufacturing method thereof

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Embodiment Construction

[0028] It is to be understood that the following disclosure provides many different embodiments, or examples, for implementing various elements of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, the formation of a first part over or on a second part may include embodiments in which the first part and the second part are formed in direct contact, as well as embodiments in which the first part may be formed on the first part. An embodiment in which other components are formed between the second component and the first component and the second component may not be in direct contact. In addition, the present invention may repeat reference symbols and / or characters in various instances.

[0029] refer to figure 1 , shows a flowchart of a method 100 of fabricating a Fin Field Effect Transistor ...

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PUM

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Abstract

The disclosure relates to a Fin field effect transistor (FinFET). An exemplary structure for a FinFET comprises a substrate comprising a top surface; a first fin and a second fin extending above the substrate top surface, wherein each of the fins has a top surface and sidewalls; an insulation layer between the first and second fins extending part way up the fins from the substrate top surface; a first gate dielectric covering the top surface and sidewalls of the first fin having a first thickness and a second gate dielectric covering the top surface and sidewalls of the second fin having a second thickness less than the first thickness; and a conductive gate strip traversing over both the first gate dielectric and second gate dielectric.

Description

technical field [0001] The present invention relates to integrated circuit fabrication, and more particularly, to fin field effect transistors. Background technique [0002] As the semiconductor industry has advanced to nanotechnology process nodes in pursuit of greater device density, superior performance, and lower cost, challenges in manufacturing and design issues have given rise to three-dimensional designs such as fin field-effect transistors (FinFETs). )development of. A typical FinFET is fabricated with vertical thin "fins" (or fin structures) extending from the substrate, eg, etched into the silicon layer of the substrate. In this vertical fin the channel of the FinFET is formed. A gate is provided over (eg surrounding) three sides of the fin. Having gates on both sides of the channel allows the trench to be gate controlled from both sides. Furthermore, carrier mobility can be enhanced using strained material in the recessed source / drain (S / D) portions of FinFET...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/423H01L21/336
CPCH01L21/823807H01L21/823821H01L21/845H01L27/0924H01L27/1211H01L29/66818H01L21/2236H01L21/823431H01L21/823462H01L21/823814H01L21/823857H01L21/823878
Inventor 万幸仁叶凌彦施启元林以唐张智胜
Owner TAIWAN SEMICON MFG CO LTD