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Electrode for producing a plasma, plasma chamber having said electrode, and method for analyzing or processing a layer or the plasma in situ

A plasma and electrode technology, applied in the main electrode of discharge tube, ion implantation coating, spectrometry/spectrophotometry/monochromator, etc., can solve the problem of inappropriate collection of extensive information, etc.

Inactive Publication Date: 2013-05-15
FORSCHUNGSZENTRUM JULICH GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The downside is that the device is also not suitable for collecting extensive information for the method

Method used

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  • Electrode for producing a plasma, plasma chamber having said electrode, and method for analyzing or processing a layer or the plasma in situ
  • Electrode for producing a plasma, plasma chamber having said electrode, and method for analyzing or processing a layer or the plasma in situ
  • Electrode for producing a plasma, plasma chamber having said electrode, and method for analyzing or processing a layer or the plasma in situ

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Embodiment Construction

[0067] figure 1 The principle of solving the object of the invention by means of optical through-holes is shown. A substrate 6 is arranged on the electrode 1 , ie the counter electrode. The rf electrode 2 of the present invention has an optical through-hole large enough for in situ analysis or processing of the substrate or plasma. For this purpose, the beam path of the beam is guided to the substrate at an angle of incidence of 0° to the substrate and focused by the lens. The region of the optical through-opening is indicated with reference numeral 5 . The use of smaller openings to align the cone of the via 5 of the substrate advantageously results in a image 3 More back radiation from the substrate can be collected through the lens than a simple hole implementation in the . A metal shielding grid 4 , indicated by a dotted line, is arranged on the side of the via 5 facing the substrate. For this purpose, the shielding device can be soldered in a groove in the optical ...

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Abstract

The invention relates to an RF electrode for producing a plasma in a plasma chamber, characterized by an optical lead-through. The invention further relates to a plasma chamber, comprising an RF electrode and a counter-electrode having a substrate retainer for accommodating a substrate. For said plasma chamber, a high-frequency alternating field can be developed between the RF electrode and the counter-electrode in order to produce the plasma. The chamber is characterized by an RF electrode having an optical lead-through. The invention further relates to a method for analyzing or processing a layer or a plasma in a plasma chamber in situ. In said method, the layer is arranged on a counter-electrode and an RF electrode is arranged on the side facing the layer.; The method is characterized by the selection of an RF electrode having an optical lead-through, and by at least one step, in which electromagnetic radiation is conducted through the optical lead-through for the purpose of analyzing or processing the layer or the plasma, and by at least one further step, in which the scattered or emitted or reflected radiation is fed to an analyzing device.

Description

technical field [0001] The invention relates to an electrode for generating a plasma, a plasma chamber having said electrode and a method for in situ analysis or in situ processing of layers or plasmas. Background technique [0002] From Li et al. (Li, Y.M., Ilsin A.N., Ngyuen H.V., Wronski C.R., Collins R.W. (1991), Real-Time-Spectroscopic Ellipsometry Determination of the Evolution of Amorphous-Semiconductor Optical Functions, Bandgap, and Microstructure. Journal of Non- Crystalline Solids, Vol.137,787-790) are known for the in situ characterization of amorphous layers during plasma enhanced chemical vapor deposition (PECVD) . As a method, these authors use spectral ellipsometry under the condition that the incident angle of light is 70°. A disadvantage is that with this method and the ellipsometer used only a relatively limited description of the layer properties can be obtained. [0003] Wagner et al. (Wagner V., Drews, D., Esser, D.R., Zahn, T., Geurts, J., and W. Ri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32C23C16/52
CPCC23C14/52H01J1/02C23C16/44H01J37/32972G01J3/44H01J37/32623C23C16/52C23C16/5096H01J37/32
Inventor S.穆特曼A.戈迪恩R.卡里尤斯M.许尔斯贝克D.哈伦斯基
Owner FORSCHUNGSZENTRUM JULICH GMBH