Method for improving surface resistance uniformity of wafer after laser annealing
A technology of laser annealing and surface resistance, which is used in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of complex device structure, difficult to use effectively, uneven laser irradiation, etc., and achieve the effect of overcoming poor uniformity.
Inactive Publication Date: 2013-05-22
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology
Although this method can improve the problem of uneven irradiation of laser in the existing laser annealing, its device structure is relatively complicated, and it is difficult to be effectively used in the actual production process.
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[0036] The present invention is a method for improving the uniformity of wafer surface resistance after laser annealing, and the specific implementation of the method of the present invention is as follows:
[0037] The laser scanning process in the laser annealing process of the present invention is divided into two parts, including a primary scanning process and a secondary scanning process. In the primary scanning process, the wafer is placed with the opening end (notch) of the notch facing directly downward, while in the second scanning process, the scanned wafer is placed with the opening end of the notch facing horizontally to the right. Wherein, the primary scanning process is composed of multiple first partial scanning steps; the secondary scanning process is composed of multiple second partial scanning steps.
[0038] The specific steps for the initial scan are:
[0039] like Figure 2A As shown in , the wafer is placed with the opening end of the notch facing direc...
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The invention relates to a method for improving surface resistance uniformity of a wafer after laser annealing. A laser annealing device is used for performing laser annealing scanning for the wafer, and laser annealing scanning includes primary scanning and secondary scanning. In a primary scanning process, an open end of a notch of the wafer faces a direction, and the direction of the notch is kept unchanged. In a secondary scanning process, the open end of the notch of the wafer faces another direction relative to the direction of the notch of the wafer in primary scanning, and the direction of the notch of the wafer is also kept unchanged. After annealing is performed by the method, the problem of poor uniformity of internal resistance of a single wafer can be solved, uniformity of laser on the surface of the wafer can be effectively improved, and finally, resistance uniformity after annealing is improved.
Description
technical field [0001] The invention relates to a semiconductor annealing process, in particular to a laser annealing process flow. Background technique [0002] As the feature size of the chip enters below 45 nanometers, the requirement for junction depth becomes shallower and shallower. The Spike Anneal process traditionally used to activate source / drain doping elements after ion implantation is no longer applicable. The diffusion of doping elements caused by the annealing time of the second level is enough to affect the performance of the device. [0003] The degree of diffusion of doping elements is directly proportional to the annealing time, so controlling the annealing time is particularly important. Therefore, the laser annealing process, which can heat the wafer surface to the target temperature within a microsecond (Micron Second) time, has now been widely used in source / drain activation (Source / Drain Activation) below 45 nanometers. [0004] At present, when per...
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IPC IPC(8): H01L21/268H01L21/02
Inventor 邱裕明
Owner SHANGHAI HUALI MICROELECTRONICS CORP