Method for low-temperature growth of graphene by remote plasma reinforced atomic layer deposition

Abstract

The invention discloses a method for low-temperature growth of graphene by remote plasma reinforced atomic layer deposition. The method comprises the following steps of: by using liquid benzene as a C source, carrying out graphene growth in an ALD mode by using a PEALD apparatus, and carrying out low-temperature growth using remote plasma as another source of PEALD; based on a copper foil as a base, washing and reducing the surface of the Cu base by using adopting 3kW large-power H2 / Ar plasma before reaction to remove dirt and an oxidization layer from the surface of the Cu base. The method disclosed by the invention utilizes a remote plasma reinforced atomic layer deposition system (PEALD) to implement single-layer and multi-layer growth, so that the graphene thickness can be precisely controlled, the prepared graphene has high degree of crystallinity and high purity, and the graphene can be prepared at a low temperature.

Description

technical field [0001] The invention belongs to the technical field of graphene preparation, and relates to a preparation method for low-temperature growth of graphene, in particular to a method for low-temperature growth of graphene by remote plasma enhanced atomic layer deposition (PEALD). Background technique [0002] Since graphene was reported in 2004, it has been favored by many researchers due to its unique mechanical, thermal, optical, electrical properties and its potential application value. Graphene is carbon atoms through sp 2 The single-layer carbon atom two-dimensional structure material formed by hybridization, like carbon nanotubes, has great application prospects in the fields of new high-performance nanoelectronic devices, new display devices, batteries, sensors and high-performance composite materials. [0003] So far, the preparation methods of graphene can be roughly divided into the following two categories: [0004] The first category is mechanical e...

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Problems solved by technology

[0004] The first category is mechanical exfoliation method; mechanical method includes micromechanical separation method, tape method, etc. The main process is to peel high-quality graphite layer by layer by mechanical method to obtain single-layer or multi-layer graphene. This method does not require much equipment. High, easy to operate, and can obtain graphene whose structure is very close to raw graphite, but it is difficult to obtain large-area graphite and large-scale industrial production

The second type: chemical method; such as redox method, the main process is to oxidize graphite into graphite oxide with a strong oxidant first, so that the distance between single-layer graphite becomes larger, which is beneficial to separate it by mechanical methods such as ultrasonic or thermal expansion to obtain a single layer or Multilayer graphite oxide, and finally the resulting graphite oxide is reduced to graphene with a reducing agent. This method is low-cost enough to prepare graphene, but the graphene obtained by this method is difficult to completely reduce, and the quality and purity of the graphene obtained are poor. not tall

The method of epitaxially growing graphene on the surface of SiC has high cost, low efficiency, poor controllability, and is difficult for large-scale industrial production.

[0005] Chemical vapor deposition (CVD) provides an effective method for preparing graphene. Its biggest advantage is that it can prepare large-area graphite. The disadvantage is that it requires high temperature and the thickness of graphene is not easy to control during the preparation process.

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