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Method for preparing BiFe1-xCrxO3 ferroelectric film by using sol-gel method

A ferroelectric thin film and gel method technology, applied in the field of functional materials, can solve the problems of large leakage conductance of pure-phase BiFeO, inability to obtain a saturated hysteresis loop, limiting practical applications, etc., so that the doping amount can be precisely controlled, Increased structural distortion and enhanced ferroelectricity

Active Publication Date: 2015-01-28
盐城青墩津邦水务有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, pure phase BiFeO 3 There is a problem of large leakage conductance, which makes it impossible to obtain a saturated hysteresis loop and high remanent polarization, which greatly limits its practical application

Method used

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  • Method for preparing BiFe1-xCrxO3 ferroelectric film by using sol-gel method
  • Method for preparing BiFe1-xCrxO3 ferroelectric film by using sol-gel method
  • Method for preparing BiFe1-xCrxO3 ferroelectric film by using sol-gel method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O and Cr(NO 3 ) 3 9H 2 O was dissolved in a mixture of ethylene glycol methyl ether, acetic anhydride and ethanolamine at a molar ratio of 1.05:1.00:0.00, and after magnetic stirring for 3 hours, stable BiFeO with a metal ion concentration of 0.003 mol / L was obtained. 3 Precursor solution, wherein the volume ratio of ethylene glycol methyl ether, acetic anhydride and ethanolamine is 14:5:1.

[0027] Step 2: Spin-coat BiFeO on FTO / glass substrate by spin-coating method 3 Thin films were prepared from the precursor solution, and the layer-by-layer annealing process was used to obtain crystalline BiFeO 3 film.

[0028] Step 3: In Crystalline BiFeO 3 Preparation of 0.502mm thin film surface by ion sputtering 2 Au electrode, and then 300 ℃ for 20min for electrode annealing treatment.

[0029] Determination of BiFeO by XRD 3 Phase composition and structure of thin films, determined by FE-SEM for BiFeO 3 Microscopic ...

Embodiment 2

[0031] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, and Cr(NO 3 ) 3 9H 2 O was dissolved in a mixture of ethylene glycol methyl ether, acetic anhydride and ethanolamine at a molar ratio of 1.05:0.99:0.01, and after magnetic stirring for 3 hours, a stable BiFe with a metal ion concentration of 0.3mol / L was obtained. 0.99 Cr 0.01 o 3 Precursor solution, wherein the volume ratio of ethylene glycol methyl ether, acetic anhydride and ethanolamine is 14:5:1.

[0032] Step 2: Spin-coat BiFe on FTO / glass substrate by spin-coating method 0.99 Cr 0.01 o 3 Thin films were prepared from the precursor solution, and the layer-by-layer annealing process was used to obtain crystalline Cr-doped BiFe 0.99 Cr 0.01 o 3 film.

[0033] Step 3: BiFe in Crystalline State 0.99 Cr 0.01 o 3 Preparation of 0.502mm thin film surface by ion sputtering 2 Au electrode, and then 300 ℃ for 20min for electrode annealing treatment.

[0034] Determination of BiFe by XRD 0.99 Cr 0.01 o ...

Embodiment 3

[0036] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, and Cr(NO 3 ) 3 9H 2 O was dissolved in a mixture of ethylene glycol methyl ether, acetic anhydride and ethanolamine at a molar ratio of 1.05:0.98:0.02, and after magnetic stirring for 3 hours, a stable BiFe with a metal ion concentration of 0.1mol / L was obtained. 0.98 Cr 0.02 o 3 Precursor solution, wherein the volume ratio of ethylene glycol methyl ether, acetic anhydride and ethanolamine is 14:5:1.

[0037] Step 2: Spin-coat BiFe on FTO / glass substrate by spin-coating method 0.98 Cr 0.02 o 3 Thin films were prepared from the precursor solution, and the layer-by-layer annealing process was used to obtain crystalline Cr-doped BiFe 0.98 Cr 0.02 o 3 film.

[0038] Step 3: BiFe in Crystalline State 0.98 Cr 0.02 o 3 Preparation of 0.502mm thin film surface by ion sputtering 2 Au electrode, and then 300 ° C for 20 min for electrode annealing treatment.

[0039] see figure 1 As shown, the BiFe was determi...

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Abstract

The invention provides a method for preparing a BiFe1-xCrxO3 ferroelectric film by using a sol-gel method. The method comprises the following steps of: dissolving bismuth nitrate, ferric nitrate and chromic nitrate according to a molar ratio of 1.05: (1-x): x into a mixed solution containing ethylene glycol monomethyl ether, acetic oxide and cholamine, and magnetically stirring to obtain a stable BiFe1-xCrxO3 precursor with the metal ion concentration of 0.003-0.3mol / L, wherein x is equal to 0.00-0.03, and the volume ratio of the ethylene glycol monomethyl ether to the acetic oxide to the cholamine is 14: 5: 1. A film is prepared by spin-coating the BiFe1-xCrxO3 precursor on an FTO (Fluorine-doped Tin Oxide) / glass substrate by using a spin-coating method, and a crystalline BiFe1-xCrxO3 film is obtained by adopting a layer-by-layer annealing process. The method disclosed by the invention has simple requirements on equipment, and experimental conditions are easy to achieve; the prepared film is better in uniformity, and the doping amount is easy to control; and the ferroelectric property of the BiFeO3 film is improved through B-bit Cr doping.

Description

technical field [0001] The invention belongs to the field of functional materials and relates to the preparation of BiFe on the surface of a functionalized FTO / glass substrate 1-x Cr x o 3 thin film method. Background technique [0002] BiFeO 3 It has ferroelectricity and antiferromagnetism, accompanied by weak ferromagnetism, which has greatly aroused people's research interest. BiFeO 3 With a twisted perovskite structure, it has both ferroelectric order (TC=810°C) and G-type antiferromagnetic order (TN=380°C) at room temperature, and is one of the few single-phase multiferroic materials. BiFeO 3 It has a wide range of applications in information storage, information storage, image display, etc. However, pure phase BiFeO 3 There is a problem of large leakage conductance, which makes it impossible to obtain a saturated hysteresis loop and high remanent polarization, which greatly limits its practical application. Contents of the invention [0003] The object of th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/42C04B35/624
Inventor 谈国强刘文龙
Owner 盐城青墩津邦水务有限公司
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