A kind of mos type high voltage integrated circuit and manufacturing method

Abstract

The invention discloses a metal oxide semiconductor (MOS) type high voltage integrated circuit and a manufacturing method. The MOS type high voltage integrated circuit is used in the manufacturing field of the semiconductor integrated circuit. The circuit includes a high voltage P-channel Metal Oxide Semiconductor (PMOS) and a high voltage N-channel metal oxide semiconductor (NMOS) which are arranged on a substrate. A channel length of high voltage PMOS is equal to an overlying width of a polysilicon gate which is arranged on the self body and an N trap active area. A channel length of the high voltage NMOS is equal to the width of polysilicon gate which is arranged on the self body. the side wall of a first heavy doping drain region N+ is surrounded with a light doping drain region NLDD, a distance is set between the side wall of the first heavy doping drain region N+ and the edges of the side wall, and an edge interval of a field oxide.teh side wall of the second heavy doping drain region P+ is surrounded by a P field doping drain region, a distance is set between the side wall of the second heavy doping drain region P+ and the interval of the edges of the polysilicon gate. The MOS type high voltage integrated circuit and the manufacturing method weaken a superficial electric field of the high voltage MOS integrated circuit.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a MOS type high-voltage integrated circuit and a manufacturing method. Background technique [0002] Semiconductor integrated circuits are classified according to device structure, including bipolar integrated circuits, MOS integrated circuits, bipolar and MOS hybrid integrated circuits (abbreviated as BiCMOS), bipolar / MOS / power double-diffused MOS hybrid integrated circuits (referred to as BCD ), etc.; according to the classification of working voltage, there are low-voltage integrated circuits and high-voltage integrated circuits. [0003] Definition of MOS-type high-voltage integrated circuits: On the basis of conventional low-voltage integrated circuits (working voltage 3.3-6 volts), integrated high-voltage NMOS and high-voltage PMOS, MOS-type integrated circuits with application voltages greater than 6 volts (generally greater than 9 volts) ;In ...

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Problems solved by technology

[0016] The present invention provides a MOS type high-voltage integrated circuit and its manufacturing method. The method provided by the present invention solves the problems in the prior art that the manufacturing process of high-voltage integrated circuits is complicated and the manufacturing cost is relatively high.

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