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High speed gallium arsenide based channel strain high electron mobility transistor material

A high electron mobility and composite channel technology, applied in the field of compound semiconductor materials, can solve the problems of InP substrate fragility, restriction of power amplifier circuit, and low source-drain breakdown voltage, and achieve superior millimeter-wave frequency device characteristics, Superior millimeter-wave frequency characteristics and the effect of improving source-drain breakdown voltage

Active Publication Date: 2009-12-16
北京中科微投资管理有限责任公司
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Problems solved by technology

[0003] GaAs-based HEMTs are mainly used below the Ka band, while InP-based HEMTs still have high gain and low noise performance in the higher W-band, but the shortcomings of InP-based HEMTs are: first, the source-drain breakdown voltage is low, and the output power Small, which restricts its application in microwave power amplifier circuits; second, the InP substrate is fragile, the chip size is small, the price is high, and the processing cost is high
[0006] However, due to the conventional InP-based HEMT epitaxial structure, the source-drain breakdown voltage of the device is low
In the current literature reports, the typical source-drain breakdown voltage of MHEMT is 5 to 7 volts. This low breakdown voltage leads to low output power of MHEMT, which restricts its use in power amplifier circuits.

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  • High speed gallium arsenide based channel strain high electron mobility transistor material
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  • High speed gallium arsenide based channel strain high electron mobility transistor material

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[0029] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0030] Such as figure 2 as shown, figure 2 The schematic diagram of the high-speed gallium arsenide-based compound channel MHEMT material provided by the present invention, the MHEMT material consists of a lattice strained layer In x Al 1-x As, channel lower barrier layer In0.52 Al 0.48 As, channel layer doped with InP, channel layer not doped with InP, channel layer In 0.53 Ga 0.47 As, space isolation layer In 0.52 Al 0.48 As, planar doped layer, barrier layer In 0.52 Al 0.48 As and highly doped cap layer In 0.53 Ga 0.47 As composition.

[0031] Among them, the lattice strain layer In x Al 1-x As is grown on the GaAs substrate by low-temperature epitaxial growth method, the temperature is kept low during g...

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Abstract

The invention relates to the technical field of compound semiconductor materials, and discloses a high-speed gallium arsenide-based composite channel MHEMT material. Layer In0.52Al0.48As, channel layer doped with InP, channel layer not doped with InP, channel layer In0.53Ga0.47As, space isolation layer In0.52Al0.48As, planar doped layer, barrier layer In0. 52Al0.48As and highly doped capping layer In0.53Ga0.47As. Utilize the present invention, combine the low-field high electron mobility of In0.53Ga0.47As and the characteristics of high threshold energy and high saturation rate of InP under high field, solve the shortcoming of low source-drain breakdown voltage of conventional MHEMT devices, and achieve It not only improves the source-drain breakdown voltage, but also ensures that the device has superior millimeter-wave frequency characteristics.

Description

technical field [0001] The invention relates to the technical field of compound semiconductor materials, in particular to a high-speed gallium arsenide-based composite channel strain high electron mobility transistor material. Background technique [0002] High Electron Mobility Transistor (HEMT) has the characteristics of high frequency, high speed, high power gain and low noise figure, so it is widely used in military, space and civil communication fields. Such as millimeter wave radar, electronic warfare, intelligent equipment, satellite communication and radiation astronomy, etc. [0003] GaAs-based HEMTs are mainly used below the Ka band, while InP-based HEMTs still have high gain and low noise performance in the higher W-band, but the shortcomings of InP-based HEMTs are: first, the source-drain breakdown voltage is low, and the output power Small, which restricts its application in microwave power amplifier circuits; second, the InP substrate is fragile, the chip size...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L29/201
Inventor 徐静波张海英叶甜春尹军舰
Owner 北京中科微投资管理有限责任公司
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