Self-referencing MRAM cells with optimized reliability
A self-referential, component technology, applied in electrical components, magnetic objects, magnetic films, etc., can solve problems such as exceeding the breakdown voltage of the insulating layer, and achieve the effect of minimizing the risk of breakdown and aging
Inactive Publication Date: 2017-03-01
CROCUS TECHNOLOGY
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Problems solved by technology
The voltage applied across the magnetic tunnel junction may reach or even exceed the breakdown voltage of such an insulating layer
Method used
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[0013] figure 1 A random access memory (MRAM) element 1 according to the embodiment is shown. The MRAM element 1 includes a magnetic tunnel junction 2 having a first portion 2', and the first portion 2'includes: a first storage layer 23 having a first storage magnetization 231, a first storage layer 23 having a first free magnetization 211 The sensing layer 21 and the first tunnel barrier layer 25 between the first storage layer 23 and the first sensing layer 21. The magnetic tunnel junction 2 also includes a second portion 2", which includes: a second storage layer 24 having a second storage magnetization 232, a second sensing layer 22 having a second free magnetization 212, and The second tunnel barrier layer 26 between the second storage layer 24 and the second sensing layer 22. The magnetic tunnel junction 2 also includes an anti-ferromagnetic layer 20, which is included between the first and second storage layers 23, 24 and below the critical temperature of the anti-ferro...
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The present invention relates to self-referencing MRAMs with optimized reliability. A random access memory (MRAM) element suitable for thermally assisted write operations and self-referencing read operations, the MRAM element comprising a magnetic tunnel junction portion having a first portion and a second portion , each part includes a storage layer, a sensing layer, and a tunnel barrier layer; the magnetic tunnel junction also includes an antiferromagnetic layer between the two storage layers and pins the storage of each of the storage layers below the critical temperature magnetization, and free them at and above the critical temperature; such that during a write operation, when a write magnetic field is applied, the free magnetization of each of the sensing layers is magnetically accessible according to the direction of the write magnetic field saturated; and the storage magnetization is switchable in a direction substantially parallel to and corresponding to the direction of the saturated free magnetization.
Description
Technical field [0001] The present invention relates to a random access memory (MRAM) element suitable for thermally assisted write operations and self-referencing read operations, which can be reliably written at a higher temperature than conventional MRAM cells. Background technique [0002] A magnetic random access memory (MRAM) cell that uses a so-called self-referencing read operation typically includes a magnetic tunnel junction formed by: a magnetic storage layer with magnetization, the direction of which can be changed from the first The stable direction changes to a second stable direction; a thin insulating layer; and a sensing layer having magnetization with a reversible direction. The self-referencing MRAM cell allows for low power consumption and increased speed to perform write and read operations. The self-reference reading operation is described by the same applicant in European patent application EP 2276034. It typically includes as a double sampling, where the...
Claims
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IPC IPC(8): H01L43/08H01L43/02H01L43/12
CPCH01F10/3254H01F10/3263G11C11/161G11C11/1675G11C11/1673H10N50/10H10N50/01H10B61/00
Inventor I·L·普雷杰比努
Owner CROCUS TECHNOLOGY