Doping method of NMOS (N-channel metal oxide semiconductor) pipe
A technology of doping dose and impurity, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve problems such as unsatisfactory efficiency
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[0017] Such as figure 2 As shown, the doping method proposed by the present invention includes the following steps:
[0018] 1. A gate oxide layer 103 is formed on the P-type semiconductor substrate 100, and a hard mask layer 105 is deposited on the gate oxide layer 103;
[0019] 2. The first ion implantation of the drain region: the P-type semiconductor substrate 100 is doped at an angle α between the ion beam 200 and the horizontal direction to define the drain region 102. The doped impurities are N-type impurities. The dose is 1 / 2 of the total dopant dose of the drain region 102; the height of the hard mask layer 105 is: when the first ion implantation of the drain region is performed, the ion beam is shielded by the hard mask layer Only the drain region 102 can be doped, while the source region 101 has no ion implantation, ie figure 2 As shown, during the first ion implantation of the drain region, the ion beam 200' (the direction of which is parallel to the ion beam 200) c...
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