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Light emitting device with reduced epi stress

A light-emitting device and stress technology, applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of failure of the upper layer 175, increase of light extraction efficiency of the light-emitting element 170, permanent failure of the device 100, etc.

Active Publication Date: 2013-06-12
LUMILEDS HLDG BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Deformation 190 causes repeated stress to interconnect layer 165 and light emitting element 160 and can cause permanent failure of device 100
Additionally, the upper layer 175 of the light emitting device may be etched to increase the light extraction efficiency of the light emitting element 170, which may cause the upper layer 175 to be more susceptible to stress-induced failure

Method used

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  • Light emitting device with reduced epi stress
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  • Light emitting device with reduced epi stress

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Embodiment Construction

[0017] In the following description, for the purpose of explanation and not limitation, specific details such as specific architecture, interface, technology, etc. are set forth, so as to provide a thorough understanding of the concept of the present invention. However, it will be apparent to those skilled in the art that the present invention can be practiced in other embodiments that depart from these specific details. In a similar manner, the text of this specification is directed to exemplary embodiments as illustrated in the various figures, and is not intended to limit the claimed invention beyond the limits expressly included in the claims. For reasons of simplification and clarity, detailed descriptions of well-known devices, circuits and methods are omitted, so as not to obscure the description of the present invention due to unnecessary details.

[0018] For ease of reference, since the stress will be most pronounced at the uppermost / surface layer 175 (hereinafter refer...

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Abstract

Elements are added to a light emitting device to reduce the stress within the light emitting device caused by thermal cycling. Alternatively, or additionally, materials are selected for forming contacts within a light emitting device based on their coefficient of thermal expansion and their relative cost, copper alloys being less expensive than gold, and providing a lower coefficient of thermal expansion than copper. Elements of the light emitting device may also be structured to distribute the stress during thermal cycling.

Description

Technical field [0001] The present invention relates to the field of light emitting devices, and in particular to the manufacture of light emitting devices (LEDs) with reduced epitaxial stress. Background technique [0002] As the light-emitting capabilities of light-emitting diodes (LEDs) continue to improve, their use in traditional lighting applications continues to increase, and the competitive pressure to provide reliable and durable products in a cost-effective manner continues to increase. Due to the growing market for these devices, even if the cost of LED products is lower, saving even a few cents per device can have a significant impact on profitability. [0003] In order to reduce the cost of LED devices, copper can replace gold as the bulk metal for the electrical contacts of the LED die. However, gold is still the preferred metal to provide efficient and reliable electrical and mechanical interconnection between the LED and its carrier in a flip-chip configuration in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/40H01L33/62H01L23/485
CPCH01L33/40H01L33/62H01L2924/0002H01L2924/00H01L33/641H01L33/56H01L33/642H01L33/644H01L33/12H01L33/486H01L33/647
Inventor F.S.迪亚纳Y.魏S.夏亚菲诺B.J.莫兰
Owner LUMILEDS HLDG BV