Variable resistance memory device and method for fabricating the same

Abstract

The invention discloses a variable resistance memory device and a method for fabricating the same. The variable resistance memory device includes a semiconductor substrate having an active area defined by an isolation layer extending in one direction, a gate line extending in another direction crossing the isolation layer through the isolation layer and the active area, a protective layer located over the gate line, a contact plug positioned in a partially removed space of the active area between the protective layers, and a variable resistance pattern coupled to a part of the contact plug.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2011-0146050 filed on December 29, 2011, the entire contents of which are hereby incorporated by reference. technical field [0003] Exemplary embodiments of the present invention relate to a variable resistance memory device and a method of manufacturing the same, and more particularly, to a variable resistance memory device using a self-aligned contact process and a method of manufacturing the same. Background technique [0004] A variable resistance memory device stores data by utilizing the property of changing resistance value and switching between two different resistance states in response to external stimuli. The variable resistance memory device may include resistive random access memory (ReRAM), phase change RAM (PCRAM), spin transfer torque RAM (STT-RAM), and the like. [0005] figure 1 It is a plan view illustrating the layout of a con...

AI Technical Summary

Problems solved by technology

Therefore, existing variable resistance memory devices are difficult to fabricate and have high resistance values

In addition, due to the misalignment of the mask pattern, the contact resistance can increase rapidly, or the contact area is not opened

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