Compact type insulated gate bipolar transistor (IGBT) module driving unit

Abstract

The invention discloses a compact type insulated gate bipolar transistor (IGBT) module driving unit. The compact type IGBT module driving unit comprises a power board, a driving core board and a driving adaptive board, wherein a control protection circuit is arranged on the driving core board, a driving circuit is arranged on the driving adaptive board, and the power board, the driving core board and the driving adaptive board are connected in sequence through a cable or connecting terminals. According to the compact type IGBT module driving unit, a power module is independently arranged, core circuits of control protection and the like of an IGBT module are placed in the driving core board, the driving circuit is placed in the adaptive board, and only a corresponding module adaptive board needs to be changed so as to correspond to IGBT modules of different manufacturers and different model numbers. The core board can be connected with module adaptive boards of various model numbers, so that the aim of being in common use is achieved. A temperature measurement circuit, an electric current measurement circuit and a control protection circuit are designed to be in the same driving core board, wherein the temperature measurement circuit, the electric current measurement circuit and the control protection circuit are arranged in a dispersed mode, so that compactibility is achieved. Optional functions such as overheating protection, short pulse suppression and weak light protection are arranged, so that flexible smart configuration is achieved.

Description

technical field [0001] The invention relates to a compact IGBT module drive unit, which belongs to the technical field of electric power electronics. Background technique [0002] my country's electric power industry is developing rapidly, and its demand will maintain a continuous and rapid growth trend and the demand scale is increasing. The current characteristics of my country's electric power industry are high reliability requirements and strong practicability; outstanding economic benefits; energy saving, environmental protection, and high efficiency have become the main trend. In such an environment, high-voltage and high-power power electronic products using IGBTs as switching devices have become the darling of the market. [0003] At present, foreign IGBT drive and control technologies are becoming more and more mature, but most domestic applications directly purchase IGBT drive and control devices produced by large foreign companies, and they all use off-the-shelf d...

AI Technical Summary

Problems solved by technology

[0003] At present, foreign IGBT drive and control technologies are becoming more and more mature, but most domestic applications directly purchase IGBT drive and control devices produced by large foreign companies, and they all use off-the-shelf drive chips to realize monitoring, control and protection functions. The logic is relatively simple. low reliability

The configuration of each protection control function of the existing drive unit is inflexible, and the circuit is too scattered

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