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Semiconductor device and method of forming the same

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve the problems of complex process steps and high production costs, and achieve the effect of simplifying the process and reducing costs

Active Publication Date: 2016-07-13
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, when forming a PIP capacitor or a PPS capacitor in an existing flash memory circuit, the process steps are complicated and the production cost is high

Method used

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  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same

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Embodiment Construction

[0025] As mentioned in the background, when forming a PIP capacitor or a PPS capacitor in an existing flash memory circuit, the process steps are complicated and the production cost is high.

[0026] Existing flash memory circuits include flash cell devices, logic devices and capacitors, wherein the capacitors are formed at the same time as the logic devices. Take the PIP capacitor as an example, please continue to refer to figure 1 After forming the first polysilicon layer 13 on the surface of the shallow trench isolation structure 11, while forming the first dielectric layer 14 on the surface of the first polysilicon layer 13, on the surface of the semiconductor substrate 10 where logic transistors need to be formed Forming a gate dielectric layer; while forming the second polysilicon layer 15 on the surface of the first dielectric layer 14, forming a gate electrode layer on the surface of the gate dielectric layer; after that, forming a gate electrode layer on the gate diel...

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Abstract

Provided are a semiconductor device and a forming method of the semiconductor device. The forming method of the semiconductor device comprises the steps of providing a semiconductor substrate, wherein the semiconductor substrate is provided with a capacitance area; forming a flash memory unit on the surface, in the capacitance area, of the semiconductor substrate, wherein the flash memory unit comprises a tunneling oxide layer arranged on the surface of the semiconductor substrate, and a word line layer arranged on the surface of the tunneling oxide layer; forming a medium layer on the surface of the word line layer; forming an electrode layer on the surface of the medium layer; and forming electric conducting plugs which are respectively and electrically connected with the word line layer and the electrode layer. The forming method of the semiconductor device is simple in technology, and reduces production cost.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] Polysilicon-insulator-polysilicon (PIP, Poly-Insulator-Poly) capacitors and polysilicon-polysilicon-substrate (PPS, Poly-Poly-Substrate) capacitors are widely used in logic circuits or flash memory circuits to prevent noise and analog devices frequency demodulation. [0003] Please refer to figure 1 , is a schematic cross-sectional structure diagram of an existing PIP capacitor, including: a semiconductor substrate 10, a shallow trench isolation structure 11 is formed in the semiconductor substrate 10, and the surface of the shallow trench isolation structure 11 is in contact with the semiconductor substrate 10 The surface is flush; the first polysilicon layer 13 located on the surface of the shallow trench isolation structure 11, and the first polysilicon layer 13 is doped wi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8247
Inventor 胡勇于涛
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP