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nvram control method and system

A control method and control system technology, applied in the field of NVRAM control methods and systems, can solve problems such as unrealizable, lack of control system functions, and inability to use directly, so as to improve practicability, realize effective control management, make up for wear and tear errors and The effect of lower yield

Active Publication Date: 2017-02-08
合肥致存微电子有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The emerging non-volatile phase-change memory NVRAM combines the high-speed access of DRAM memory and the characteristics of FLASH flash memory to retain data after power off, but it has problems such as wear errors and low yield, so it cannot be used directly. A sound control system can effectively use NVRAM only by controlling it, but the existing control system lacks functions and cannot meet this requirement

Method used

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Embodiment Construction

[0037] It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0038] refer to figure 1 , figure 1 It is a flowchart of an embodiment of the NVRAM control method of the present invention. like figure 1 As shown, the method includes the following steps:

[0039] Step S01, initializing the internal data of the NVRAM, reading the repairable data in the NVRAM, and repairing the read repairable data;

[0040] Step S02, storing the repaired data into an effective address of NVRAM;

[0041] Step S03, reorganize and store the information of the effective address.

[0042] NVRAM will be worn out in use, which will cause bad blocks to appear in the address area. When the address is damaged, it will be invalid. When the data in the address is read externally, the target area will not be found. In this embodiment, when the control When the system is powered on, read the data in NVRAM b...

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Abstract

The invention discloses an NVRAM (non-volatile random access memory control) method and an NVRAM control system. The non-volatile random access memory control method includes: initializing internal data of an NVRAM, reading repairable data in the NVRAM, and repairing the read repairable data; storing repaired data to an effective address of the NVRAM; reassembling information of the effective address, and storing. By effectively controlling and managing the NVRAM, the problems about abrasion error, low yield and the like of the NVRAM are solved, and improvement of practicality of the NVRAM is facilitated.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to an NVRAM control method and system. Background technique [0002] NVRAM is a non-volatile random access memory, a new generation of memory (flash memory) technology, which includes ferroelectric memory (FRAM or FeRAM), magnetic memory (MRAM), Ovsinski effect consistent memory ( OUM), polymer memory (PFRAM), PCRAM, Conductive Bridge RAM (CBRAM), Organic RAM (ORAM), and Nanotube RAM (NRAM). The emerging non-volatile phase-change memory NVRAM combines the high-speed access of DRAM memory and the characteristics of FLASH flash memory to retain data after power off, but it has problems such as wear errors and low yield, so it cannot be used directly. A sound control system can effectively use NVRAM only by controlling it, but the existing control system lacks functions and cannot realize this requirement. Contents of the invention [0003] The main purpose of the present invention ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F11/07G06F12/02G06F3/06
Inventor 罗天德吴大畏
Owner 合肥致存微电子有限责任公司