Plasma processing apparatus and plasma monitoring method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Publication Date
- 2013-08-21
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The present invention relates to a plasma processing apparatus for processing an object to be processed using plasma, and a plasma monitoring method of the plasma processing apparatus. Background technique
[0002] As a plasma processing apparatus that performs predetermined plasma processing on a target object such as a semiconductor wafer, there is known a slot antenna that uses a planar antenna having a plurality of slots to introduce microwaves into a processing container to generate plasma. ) way of plasma processing equipment. In addition, as another plasma processing apparatus, there is known an inductively coupled plasma (ICP) type plasma processing apparatus that uses a coil-shaped antenna to introduce high-frequency waves into a processing container to generate plasma. In these plasma processing apparatuses, high-density plasma can be generated in a processing container, and oxidation processing, nitriding processing, deposition processing, ...