Plasma processing apparatus and plasma monitoring method

A plasma and processing device technology, applied in the field of plasma processing devices, can solve the problems of inability to quickly detect the state of flameout, difficult to distinguish and monitor plasma, etc.

Active Publication Date: 2013-08-21
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

Therefore, in the plasma processing apparatus of the above-mentioned form, there is a problem that it is difficult to distinguish and monitor the states of the plasmas generated separately.
For example, as shown in Patent Document 1, in the case of adopting the method of detecting the light emission of plasma by installing a light emission sensor on the side of the processing container, it is not possible to quickly detect that one of the overlapping plasmas is extinguished.

Method used

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  • Plasma processing apparatus and plasma monitoring method
  • Plasma processing apparatus and plasma monitoring method
  • Plasma processing apparatus and plasma monitoring method

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Embodiment Construction

[0036] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, refer to figure 1 and figure 2 A configuration example of a plasma processing apparatus according to an embodiment of the present invention will be described. figure 1 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus of the present embodiment. figure 2 yes means figure 1An explanatory diagram of the configuration of the control unit shown. The plasma processing apparatus 1 according to the present embodiment performs film formation processing, diffusion processing, etching processing, A device for prescribed treatment such as ashing treatment.

[0037] The plasma processing apparatus 1 includes: a processing container 2 for accommodating a wafer W which is an object to be processed; a mounting table 21 provided inside the processing container 2 and having a mounting surface 21a on which the wafer W is ...

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Abstract

The invention provides a plasma processing apparatus, which can introduce microwaves in a processing container from multiple places and can monitor states of multiple plasmas generated by multiple microwaves. The plasma processing apparatus (1) has a microwave introducing device (5) for introducing microwaves into the processing container (2). The microwave introducing device (5) has a plurality of microwave through plates (73) fitted with a plurality of openings arranged in a top (11). Light emitting sensors are arranged on antenna modules (61) of the microwave introducing device respectively. The light emitting sensors detect illumination of the plasmas at a specific wavelength generated in the processing container (2) under the microwave through plates (73) through the microwave through plates (73). Detected targets are selected based on illumination intensity ratio of two plasmas generated by microwaves introduced by two adjacent microwave through plates (73).

Description

technical field [0001] The present invention relates to a plasma processing apparatus for processing an object to be processed using plasma, and a plasma monitoring method of the plasma processing apparatus. Background technique [0002] As a plasma processing apparatus that performs predetermined plasma processing on a target object such as a semiconductor wafer, there is known a slot antenna that uses a planar antenna having a plurality of slots to introduce microwaves into a processing container to generate plasma. ) way of plasma processing equipment. In addition, as another plasma processing apparatus, there is known an inductively coupled plasma (ICP) type plasma processing apparatus that uses a coil-shaped antenna to introduce high-frequency waves into a processing container to generate plasma. In these plasma processing apparatuses, high-density plasma can be generated in a processing container, and oxidation processing, nitriding processing, deposition processing, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/32192H01J37/32238H01J37/3244H01J37/32715H01J37/32926H01J37/32935H05H1/46H05H1/461
Inventor 藤野丰福田良则北川淳一山本伸彦
Owner TOKYO ELECTRON LTD
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