Plasma processing apparatus and plasma monitoring method

A plasma and processing device technology, which is applied in the field of plasma processing devices, can solve the problems that it is difficult to distinguish and monitor plasma, and cannot quickly detect the state of flameout.

Active Publication Date: 2016-04-27
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, in the plasma processing apparatus of the above-mentioned form, there is a problem that it is difficult to distinguish and monitor the states of the plasmas generated separately.
For example, as shown in Patent Document 1, in the case of adopting the method of detecting the light emission of plasma by installing a light emission sensor on the side of the processing container, it is not possible to quickly detect that one of the overlapping plasmas is extinguished.

Method used

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  • Plasma processing apparatus and plasma monitoring method
  • Plasma processing apparatus and plasma monitoring method
  • Plasma processing apparatus and plasma monitoring method

Examples

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Embodiment Construction

[0036] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, refer to figure 1 and figure 2 A configuration example of a plasma processing apparatus according to an embodiment of the present invention will be described. figure 1 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus of the present embodiment. figure 2 yes means figure 1An explanatory diagram of the configuration of the control unit shown. The plasma processing apparatus 1 according to the present embodiment performs film formation processing, diffusion processing, etching processing, A device for prescribed treatment such as ashing treatment.

[0037] The plasma processing apparatus 1 includes: a processing container 2 for accommodating a wafer W which is an object to be processed; a mounting table 21 provided inside the processing container 2 and having a mounting surface 21a on which the wafer W is ...

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Abstract

The present invention provides a plasma processing apparatus in which microwaves are introduced into a processing container from a plurality of locations, and the states of a plurality of plasmas generated by a plurality of microwaves are respectively monitored. The plasma processing apparatus (1) includes a microwave introduction apparatus (5) for introducing microwaves into the processing container (2). The microwave introduction device (5) has a plurality of microwave transmission plates (73) fitted into the plurality of openings of the top portion (11). The light-emitting sensors (92) are respectively provided on each antenna module (61) of the microwave introduction device (5). The luminescence sensor (92) detects, via the microwave transmissive plate (73), luminescence of a specific wavelength of plasma generated in the processing container (2) directly below the microwave transmissive plate (73). The wavelength of the detection object is selected based on the ratio of the luminescence intensities of the two plasmas generated by the microwaves respectively introduced from the two microwave transmission plates (73) adjacent to each other.

Description

technical field [0001] The present invention relates to a plasma processing apparatus for processing an object to be processed using plasma, and a plasma monitoring method of the plasma processing apparatus. Background technique [0002] As a plasma processing apparatus that performs predetermined plasma processing on an object to be processed such as a semiconductor wafer, there is known a slot antenna that uses a planar antenna having a plurality of slots to introduce microwaves into a processing container to generate plasma. way of plasma processing equipment. In addition, as another plasma processing apparatus, there is known an Inductively Coupled Plasma (ICP) type plasma processing apparatus that uses a coil-shaped antenna to introduce high-frequency waves into a processing container to generate plasma. In these plasma processing apparatuses, high-density plasma can be generated in a processing container, and oxidation processing, nitriding processing, deposition proc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
CPCH01J37/32192H01J37/32238H01J37/3244H01J37/32715H01J37/32926H01J37/32935H05H1/46H05H1/461
Inventor 藤野丰福田良则北川淳一山本伸彦
Owner TOKYO ELECTRON LTD
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