X-ray flat panel detector and manufacturing method thereof

A flat-panel detector and X-ray technology, applied in radiation control devices, etc., can solve the problems of increasing process complexity and manufacturing costs, reducing spatial resolution, and inability to integrate transistors, so as to improve image quality and reduce manufacturing costs.

Active Publication Date: 2013-09-11
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

More transistors cannot be integrated in the effective pixel size (<250μm×250μm, and smaller and smaller), so only a simple switching circuit can be formed
Therefore, the pixel signal must be transmitted to an external readout circuit, which will require serial readout and data processing, which will bring large image noise, reduce spatial resolution, and affect response speed
[0010] Although multiple CMOS pixel readout circuits can be packaged on the detector pixels to shorten the path of pixel signal transmission to improve image quality and response speed, however, this will greatly increase process complexity and manufacturing costs

Method used

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  • X-ray flat panel detector and manufacturing method thereof
  • X-ray flat panel detector and manufacturing method thereof
  • X-ray flat panel detector and manufacturing method thereof

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Embodiment Construction

[0023] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various drawings, for the sake of clarity, various parts in the drawings are not drawn to scale.

[0024] In the following, many specific details of the present invention are described, such as device structures, materials, dimensions, processing techniques and techniques, for a clearer understanding of the present invention. However, the invention may be practiced without these specific details, as will be understood by those skilled in the art. Unless otherwise specified below, various parts in the semiconductor device may be composed of materials known to those skilled in the art.

[0025] In the present application, the term "semiconductor structure" refers to a semiconductor substrate formed after undergoing various steps of manufacturing a semiconductor device and all layers or regions that have been formed on the semiconductor substrate.

[00...

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Abstract

The invention provides an X-ray flat panel detector and a manufacturing method thereof. The X-ray flat panel detector comprises a plurality of pixel units which are arranged according to matrixes. Each pixel unit comprises a sensor and a pixel reading circuit both of which are integrated on an insulating substrate. Each pixel reading unit comprises at least one thin film transistor which is located below a top electrode of each sensor, and at least one thin film transistor from the thin film transistors is connected with the corresponding sensor. According to the X-ray flat panel detector, the sensors can be integrated with the complex pixel reading circuits so that improved image quality and lowered production cost can be obtained.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, more particularly, to an X-ray flat panel detector and a manufacturing method thereof. Background technique [0002] X-ray is an ultrashort electromagnetic wave with a wavelength of about 10-0.01 nanometers, corresponding to a frequency of 3×10 16 Hz to 3×10 19 Between Hz, the energy corresponding to the wave-particle duality is between 120eV and 120keV. X-rays are neutral high-energy photon streams, which have super penetrating effects on the irradiated objects, as well as fluorescence, heating, photosensitive, ionization and other effects. After the X-ray passes through the object, its intensity or phase changes due to the absorption and scattering of the object. The content of the signal change is related to the material, structure, thickness, defect and other characteristics of the object, so it can be applied to non-contact objects through signal detectio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
Inventor 殷华湘王玉光董立军陈大鹏
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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