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Resistive variable memory based on vanadium oxide/alumina stack structure and its preparation method

A technology of resistive memory and stack structure, applied in the field of microelectronics, can solve the problem that the consistency of the intermediate state of the single-layer structure multi-value storage is difficult to be guaranteed, and achieve the effect of improving stability and consistency

Active Publication Date: 2015-09-30
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the structure of the single-layer resistive variable layer determines that there is no stable intermediate state in the reset process, it is difficult to guarantee the consistency of the intermediate state of the multi-value storage of the single-layer structure

Method used

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  • Resistive variable memory based on vanadium oxide/alumina stack structure and its preparation method
  • Resistive variable memory based on vanadium oxide/alumina stack structure and its preparation method
  • Resistive variable memory based on vanadium oxide/alumina stack structure and its preparation method

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Embodiment 1

[0027] A resistive variable memory based on a vanadium oxide / alumina stack structure, such as figure 1 As shown, it consists of a copper lower electrode 1, a resistive layer and an aluminum upper electrode 4 and forms a laminated structure, wherein the resistive layer is a laminated structure of vanadium oxide film 3 and aluminum oxide film 4, and the thicknesses of each layer are: copper The lower electrode is 100 nm, the vanadium oxide film is 70 nm, the aluminum oxide film is 3 nm, and the aluminum upper electrode is 100 nm.

[0028] The preparation method of the resistive variable memory uses a silicon wafer as a substrate, first prepares a silicon dioxide insulating layer by thermal oxidation, and then prepares a 5 nm thick Ti paste on the silicon dioxide insulating layer by ion beam sputtering. Adhesive layer, and then prepare a low-power resistive variable memory on the Ti adhesive layer, the steps are as follows:

[0029] 1) On the Ti adhesion layer, the copper lower...

Embodiment 2

[0036] A resistive variable memory based on a vanadium oxide / alumina stack structure, such as figure 1 As shown, it consists of a copper lower electrode 1, a resistive layer and a platinum upper electrode 4 and forms a laminated structure, wherein the resistive layer is a laminated structure of vanadium oxide film 3 and aluminum oxide film 4, and the thicknesses of each layer are: copper The bottom electrode is 100 nm, the vanadium oxide film is 70 nm, the aluminum oxide film is 3 nm, and the platinum top electrode is 100 nm.

[0037] The preparation method of the resistive variable memory uses a silicon wafer as a substrate, first prepares a silicon dioxide insulating layer by thermal oxidation, and then prepares a 5 nm thick Ti paste on the silicon dioxide insulating layer by ion beam sputtering. Adhesive layer, and then prepare a low-power resistive variable memory on the Ti adhesive layer, the steps are as follows:

[0038] 1) Deposit a 100 nm Cu lower electrode on the T...

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Abstract

The invention provides a resistance random access memory based on a vanadium oxide / aluminum oxide laminated structure. The resistance random access memory is composed of a lower electrode, a resistance random layer and an upper electrode to form of the laminated structure, wherein the resistance random layer is of a laminated structure of a vanadium oxide film and an aluminum oxide film. The thickness of each layer is that: the thickness of the lower electrode is 50-200nm, the thickness of the vanadium oxide film is 5-100nm, the thickness of the aluminum oxide film is 1-50nm, and the thickness of the upper electrode is 50-200nm. In a manufacturing method of the resistance random access memory, the vanadium oxide film is manufactured by a radio-frequency sputtering method, and the aluminum oxide film is manufactured by a magnetron sputtering or thermal oxidation method on the vanadium oxide film. The resistance random access memory has the advantage that the resistance random access memory adopts the vanadium oxide / aluminum oxide laminated structure and has twice reset phenomena, three impedance states including a low resistance state, a middle resistance state and a high resistance state can be obtained, resistance value ratio among the resistance states is more than 10 times, in addition, the resistance random access memory is further provided with good retentivity and repeatability.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a resistive variable memory based on a vanadium oxide / alumina laminated structure and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of computer technology and Internet technology, non-volatile memory devices play an increasingly important role in the semiconductor industry. At present, flash memory (Flash) is still the mainstream of non-volatile memory in the market, but with the continuous advancement of semiconductor technology nodes, the Flash technology based on the traditional floating gate structure is suffering from serious technical bottlenecks. Therefore, the industry has conducted a lot of research on the next-generation non-volatile memory technology, and resistive RAM (RRAM) has the advantages of high read and write speed, low power consumption, high integration, multi-valued storage capac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00G11C11/56
Inventor 张楷亮孙阔王芳陆涛孙文翔王宝林赵金石胡曦文王雨晨
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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