A device for in-situ characterization of nanothermoelectric Seebeck coefficients based on scanning thermal microscopy
A technology of Seebeck coefficient and microscope, which is applied in the direction of scanning probe microscopy, measuring device, scanning probe technology, etc., can solve the problems that restrict the nanothermoelectric transport theory, the scientific development of nanothermoelectric material preparation, and the micro-area physics of nanothermoelectric materials. Lack of in-situ quantitative characterization of performance, difficulty in realizing in-situ quantitative characterization of nanothermoelectric Seebeck coefficients, etc.
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Embodiment 1
[0052] The micro-area Seebeck coefficient of Bi-Sb-Te thermoelectric thin film was tested by using the nano-thermoelectric Seebeck coefficient in-situ quantitative characterization device established in this application, Figure 6 The test results are shown, where the abscissa is the ratio V of the triple frequency harmonic signal of the micro-area of the nanothermoelectric material to the probe first harmonic signal 3ω / V 1ω , and the ordinate is the micro-area Seebeck voltage double frequency harmonic signal V 2ω , showing a linear relationship consistent with theoretical derivation, according to its linear slope and the k value related to the resistance of the probe mentioned above, the micro-area Seebeck coefficient S= 165.7μV / K, which is very close to the macroscopic test result S=160μV / K of the film, indicating the feasibility and accuracy of the micro-area Seebeck coefficient in-situ quantitative characterization method and device.
Embodiment 2
[0054] The in-situ quantitative characterization device for nano-thermoelectric Seebeck coefficients established by this application was used to test the Seebeck coefficients of a micro-region of a thermoelectric material. The results are as follows Figure 7 shown. According to its linear slope and the aforementioned k value related to the resistance of the probe, the micro-region Seebeck coefficient S=53.10μV / K can be calculated from equation (4), which is close to the macroscopic test results of the film S=50μV / K, which reflects the inhomogeneous distribution of the Seebeck coefficient in the micro-area, and this result further shows the feasibility and accuracy of the in-situ quantitative characterization method and device for the Seebeck coefficient in the micro-area.
[0055] It must be noted that the above two results tested using the application's "A Method and Device for In-Situ Characterization of Nano-thermoelectric Seebeck Coefficients" are consistent with the publ...
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