Nano thermoelectric seebeck coefficient in-situ quantitative characterization device based on atomic force microscope

A technology of atomic force microscope and Seebeck coefficient, applied in measuring devices, nanotechnology, scanning probe microscopy, etc., can solve the problem of direct introduction and direct measurement of temperature difference of low-dimensional nanothermoelectric materials, and difficulty of measuring potential difference , unable to reflect the dynamic performance of thermoelectric materials and other issues

Active Publication Date: 2012-09-26
江苏先进无机材料研究院
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Problems solved by technology

Obviously, this method has the following insurmountable limitations for nano-thermoelectric materials: (1) It is difficult to directly introduce and measure the temperature difference of low-dimensional nano-thermoelectric materials, and it is difficult to realize the potential difference caused by the temperature difference. (2) Traditional methods cannot reflect the dynamic performance of thermoelectric materials and continuously reflect the change state of the detected parameters with the spatial position

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  • Nano thermoelectric seebeck coefficient in-situ quantitative characterization device based on atomic force microscope
  • Nano thermoelectric seebeck coefficient in-situ quantitative characterization device based on atomic force microscope
  • Nano thermoelectric seebeck coefficient in-situ quantitative characterization device based on atomic force microscope

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Embodiment 1

[0042] The micro-region Seebeck coefficient of the Bi-Sb-Te thermoelectric thin film was tested by using the nano-thermoelectric Seebeck coefficient in-situ quantitative characterization device established in this application, and Fig. 7 shows the test results. Among them, Fig. 7 (a) is the double frequency signal (V 2ω ) test results; Figure 7(b) shows the three-frequency signal of the micro-area under different excitation voltages (V 3ω ) test results; Figure 7(c) is the curve made according to the double-frequency signal in Figure (a) and the triple-frequency signal in Figure (b), and the Seebeck coefficient of the micro-area can be calculated according to the slope of the linear part, that is, S =V 2ω / V 3ω =140.01μV / K, which is very close to the macroscopic test result of the film S=138μV / K, indicating the feasibility of the micro-seebeck quantitative characterization device and the accuracy of the results.

Embodiment 2

[0044] The in-situ quantitative characterization device for nano-thermoelectric Seebeck coefficients established in this application was used to test the micro-region Seebeck coefficients of a thermoelectric material. Figure 8 Test results at an alternating frequency of 200 Hz are shown. According to the slope of its linear part, the Seebeck coefficient of the micro-area can be calculated as S=50.49μV / K. This value is very close to the macroscopic test result S=50μV / K of the film, further indicating the feasibility and accuracy of the micro-area Seebeck quantitative characterization technique.

[0045] The above examples show that the new method for in-situ quantitative characterization of nanothermoelectric Seebeck coefficients based on atomic force microscopy solves the key technical problem of in-situ quantitative characterization of nanothermoelectric Seebeck coefficient parameters without directly measuring temperature changes. The new nanometer characterization device ...

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Abstract

The invention discloses a nano thermoelectric seebeck coefficient in-situ quantitative characterization device based on an atomic force microscope, which is used for detecting a microcell seebeck coefficient of a nano thermoelectric material sample to be detected. The nano thermoelectric seebeck coefficient in-situ quantitative characterization device comprises an atomic force microscope in-situ encouraging platform of harmonic signals and a nano thermoelectric seebeck coefficient in-situ detection platform, wherein the atomic force microscope in-situ encouraging platform is used for providing the atomic force microscope platform for developing the nano thermoelectric seebeck coefficient in-situ quantitative characterization device and simultaneously exciting second harmonic generation and third harmonic generation harmonic signals of a microcell of a nano thermoelectric material in situ; and the nano thermoelectric seebeck coefficient in-situ detection platform is used for realizing in-situ real-time detection and processing of a second harmonic generation and a third harmonic generation of the nano thermoelectric material, and displaying an in-situ characterization result of a thermoelectric parameter of the microcell seebeck coefficient. The nano thermoelectric seebeck coefficient in-situ quantitative characterization device combines an atomic force microscope nano detection function, a macroscopic thermal conductance third harmonic generation testing principle, a Joule thermal effect principle and a macroscopic seebeck coefficient testing principle to establish a new method for characterizing the nano thermoelectric seebeck coefficient based on a harmonic effect induced by a thermal probe of a commercial atomic force microscope.

Description

technical field [0001] The application relates to an in-situ quantitative characterization device for nano-thermoelectric Seebeck coefficient based on an atomic force microscope (abbreviated as AFM), which belongs to the field of signal detection instruments. Background technique [0002] Nano-thermoelectric energy materials have become an important strategic energy material, and have very broad application prospects in many important fields such as microelectronics, optoelectronics, deep space exploration, national defense and military industry, and energy conservation and environmental protection. At present, the detection of nano-thermoelectric properties has increasingly become a challenging issue that needs to be solved urgently in this field. The Seebeck coefficient is an important physical parameter of thermoelectric materials. At present, its characterization still uses the traditional method, that is, not only the temperature difference between the two ends of the m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01Q60/24G01N27/00
CPCG01Q60/58G01N27/00B82Y35/00
Inventor 曾华荣陈立东赵坤宇惠森兴殷庆瑞李国荣
Owner 江苏先进无机材料研究院
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