Nano thermoelectrical Seebeck coefficient in-situ characterization device based on scanning thermal microscope

A Seebeck coefficient and microscope technology, applied in scanning probe microscopy, measuring devices, scanning probe technology, etc., can solve the lack of in-situ quantitative characterization of the physical properties of nanometer thermoelectric materials, failure, and difficulty in realizing nanometer thermoelectricity. In situ quantitative characterization of the Seebeck coefficient

Active Publication Date: 2013-10-09
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, due to the particularity of the structure and performance of nano-thermoelectric materials and the failure of traditional thermoelectric testing methods, the in-situ quantitative characterization of the physical properties of nano-thermoelectric materials has been lacking so far, which restricts the development of nano-thermoelectric transport theory and the preparation of nano-thermoelectric materials. scientific development
The Seebeck coefficient is an important physical parameter of thermoelectric materials. At present, its characterization still uses the traditional method, that is, not only the temperature difference between the two ends of the material must be directly measured by a temperature sensor, but also the potential difference caused by the temperature difference must be measured simultaneously. This macroscopic test In situ quantitative characterization of nanothermoelectric Seebeck coefficients is difficult to achieve with technology

Method used

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  • Nano thermoelectrical Seebeck coefficient in-situ characterization device based on scanning thermal microscope
  • Nano thermoelectrical Seebeck coefficient in-situ characterization device based on scanning thermal microscope
  • Nano thermoelectrical Seebeck coefficient in-situ characterization device based on scanning thermal microscope

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Embodiment 1

[0052] The micro-area Seebeck coefficient of Bi-Sb-Te thermoelectric thin film was tested by using the nano-thermoelectric Seebeck coefficient in-situ quantitative characterization device established in this application, Figure 6 The test results are shown, where the abscissa is the ratio V of the triple frequency harmonic signal of the micro-area of ​​the nanothermoelectric material to the probe first harmonic signal 3ω / V 1ω , and the ordinate is the micro-area Seebeck voltage double frequency harmonic signal V 2ω , showing a linear relationship consistent with theoretical derivation, according to its linear slope and the k value related to the resistance of the probe mentioned above, the micro-area Seebeck coefficient S= 165.7μV / K, which is very close to the macroscopic test result S=160μV / K of the film, indicating the feasibility and accuracy of the micro-area Seebeck coefficient in-situ quantitative characterization method and device.

Embodiment 2

[0054] The in-situ quantitative characterization device for nano-thermoelectric Seebeck coefficients established by this application was used to test the Seebeck coefficients of a micro-region of a thermoelectric material. The results are as follows Figure 7 shown. According to its linear slope and the aforementioned k value related to the resistance of the probe, the micro-region Seebeck coefficient S=53.10μV / K can be calculated from equation (4), which is close to the macroscopic test results of the film S=50μV / K, which reflects the inhomogeneous distribution of the Seebeck coefficient in the micro-area, and this result further shows the feasibility and accuracy of the in-situ quantitative characterization method and device for the Seebeck coefficient in the micro-area.

[0055] It must be noted that the above two results tested using the application's "A Method and Device for In-Situ Characterization of Nano-thermoelectric Seebeck Coefficients" are consistent with the publ...

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Abstract

The invention discloses a nano thermoelectrical Seebeck coefficient in-situ characterization device based on a scanning thermal microscope. The device is used for detecting the microcell Seebeck coefficient of thermal nano-materials. The device further comprises a scanning thermal microscope in-situ excitation platform of harmonic signals and a nano thermoelectrical Seebeck coefficient in-situ detection platform, wherein the microcell thermoelectrical Seebeck coefficient is as follows, wherein S is the microcell Seebeck coefficient, V<1omega>, V<2omega> and V<3omega> are a first harmonic generation harmonic signal, a second harmonic generation harmonic signal of a microcell of the thermal nano-materials and a third harmonic generation harmonic signal of the microcell of the thermal nano-materials respectively, and k is a coefficient. The nano-detection function of the scanning thermal microscope, a one-dimensional linear heat source model, the Joule heat effect principle and the macroscopic Seebeck coefficient testing principle are combined to build the new nano thermoelectrical Seebeck coefficient in-situ characterization device based on the scanning thermal microscope.

Description

technical field [0001] The application relates to a device for in-situ characterization of nano-thermoelectric Seebeck coefficients based on a scanning thermal microscope, which belongs to the field of signal detection instruments. Background technique [0002] Thermoelectric materials based on the mutual conversion effect of thermal energy and electrical energy have become an important strategic new energy material. The development of thermoelectric materials with high performance and high thermoelectric conversion efficiency has become an important development direction in the field of thermoelectric research. Due to the strong size effect and interface effect, nano-thermoelectric materials can greatly reduce the thermal conductivity of the material and improve the thermoelectric conversion efficiency, so it has become the most active and promising research field in the international thermoelectric field. At present, due to the particularity of the structure and performan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01Q60/58
Inventor 曾华荣陈立东徐琨淇赵坤宇李国荣
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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