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Method of making a photolithographic mask

A photolithography mask, mask technology, applied in the semiconductor field, can solve problems such as increasing the complexity of producing IC

Active Publication Date: 2016-10-05
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] This scaling down also increases the complexity of processing and producing ICs. To achieve these advances, similar developments in IC processing and production are required.
For example, in e-beam lithography, the need to achieve sufficient interlayer coverage presents challenges to efficiently dissipate accumulated charge

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  • Method of making a photolithographic mask
  • Method of making a photolithographic mask
  • Method of making a photolithographic mask

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Embodiment Construction

[0045] The following disclosure provides a variety of different embodiments or examples for implementing different features of the present invention. Specific examples of components and arrangements will be described below to simplify the present invention. Of course, these are only examples and are not intended to limit the invention. For example, in the following description, forming the first part above or on the second part may include an embodiment in which the first part and the second part are in direct contact, or may include other parts that may be formed between the first part and the second part An embodiment in which the first part and the second part are not in direct contact. In addition, the present invention may repeat reference symbols and / or elements in multiple examples. This repetition is used for simplification and clarity, and does not in itself represent the relationship between the various embodiments and / or configurations discussed.

[0046] reference ...

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Abstract

The present invention discloses a method of fabricating a photolithographic mask having a carbon-based charge dissipation (CBCD) layer. The method includes providing a substrate, depositing an opaque layer on the substrate, coating a photoresist, and depositing a charge dissipation layer over or under the photoresist. The photoresist is patterned by electron beam writing. The CBCD layer is removed during development of the photoresist. The invention also discloses a method for manufacturing the photolithography mask.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, and more specifically, to a method of manufacturing a photolithography mask. Background technique [0002] Semiconductor integrated circuits (IC) have experienced exponential growth. Technological advances in IC materials and design have produced several generations of ICs, each with smaller and more complex circuits than the previous generation. In the process of IC development, while reducing the geometric size (ie, the smallest component (or line) that can be produced using the manufacturing process), the functional density (ie, the number of interconnected devices per chip area) has generally increased . Overall, this scaled-down process has brought about the benefits of improving production efficiency and reducing related costs. [0003] This scaling down also increases the complexity of processing and producing ICs. In order to achieve these advancements, the same developments in...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/24G03F1/68
CPCG03F1/68B82Y10/00B82Y40/00G03F1/50G03F1/78
Inventor 林云跃李信昌陈嘉仁连大成严涛南
Owner TAIWAN SEMICON MFG CO LTD
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