Electrostatic impulse generator and direct current (DC) impulse generator

An electrostatic pulse and generator technology, applied in the direction of friction generators, etc., can solve the problems of complex structure, narrow applicability, large volume, etc., and achieve the effect of simple preparation method and simple structure

Active Publication Date: 2013-10-23
BEIJING INST OF NANOENERGY & NANOSYST
View PDF5 Cites 31 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the electrostatic induction generators that have been invented have shortcomings such as large volume and narrow applicability, while electromagne

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrostatic impulse generator and direct current (DC) impulse generator
  • Electrostatic impulse generator and direct current (DC) impulse generator
  • Electrostatic impulse generator and direct current (DC) impulse generator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] In the electrostatic pulse generator of the present embodiment, the first insulating layer and the second insulating layer all adopt thin film materials, see figure 1 , the generator is prepared on the substrate 101, the generator has a layered structure, and the generator includes a first electrode layer 102, a first insulating film layer 103, an insulating support 104, a second insulating film layer 105 and The second electrode layer 106, wherein, the material of the first insulating film layer 103 and the second insulating film layer 105 has a triboelectric sequence difference; the insulating support 104 makes the first insulating film layer 103 and the second insulating film layer 103 A gap 107 is formed between the film layers 105 , and under the action of an external force F, the first insulating film layer 103 and the second insulating film layer 105 are in contact with each other.

[0040] The materials of the first insulating film layer 103 and the second insul...

Embodiment 2

[0050] In this embodiment, the structure of the electrostatic pulse generator is the same as that in Embodiment 1, and will not be repeated here. The difference from the first embodiment is that the material surface of the first insulating film layer 103 and / or the second insulating film layer 105 facing the gap 107 in the generator is chemically modified to effectively increase the output power. For the two insulating film materials of the first insulating film layer and the second insulating film layer, more electron-losing functional groups (that is, strong electron donating groups) are introduced on the surface of the material whose polarity is positive, or on the surface of the material whose polarity is negative The introduction of functional groups that are more likely to obtain electrons (strong electron-attracting groups) can further increase the amount of charge transfer at the moment of contact, thereby increasing the contact charge density and the output power of th...

Embodiment 3

[0058] In this embodiment, the structure of the electrostatic pulse generator is the same as that in Embodiment 1, and will not be repeated here. The difference from Embodiment 1 is that one of the opposite surfaces of the first insulating film layer and the second insulating film layer is a physically modified rough surface, that is, under the action of an external force, the first insulating film layer and the second insulating film layer When the second insulating film layers are in contact, one of the surfaces in contact with each other is a physically modified rough surface.

[0059] Preferably, a nanowire or nanorod array can be prepared on the surface of the first insulating film layer or the second insulating film layer facing the gap, and the nanowires or nanorods are substantially perpendicular to the first insulating film layer or the second insulating film layer. The surface of the second insulating film layer, in order to achieve the purpose of increasing the surf...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Lengthaaaaaaaaaa
Login to view more

Abstract

The invention provides an electrostatic impulse generator, which sequentially comprises a first electrode layer, a first insulation layer, insulation supports, a second insulation layer and a second electrode layer, wherein materials of the first and second insulation layers have a friction electrode order difference, the insulation supports enable a gap to be formed between the first and second insulation layers, and under the action of external force, the first and second insulation layers are mutually contacted. The invention further provides a direct current impulse generator which combines the electrostatic impulse generator with a full-bridge rectifier. According to the electrostatic impulse generator disclosed by the invention, contact charges which are generated when the two insulation materials which have the friction electrode order difference are contacted under the action of external force are used, so the potential difference is formed between the first and second electrode layers. Under the action of periodic external force, the first and second insulation layers are periodically contacted with each other and separated from each other, and pulse currents in opposite directions are respectively generated.

Description

technical field [0001] The invention relates to a generator, in particular to an electrostatic pulse generator and a DC pulse generator which convert naturally existing mechanical energy such as motion, vibration and fluid into electrical energy. Background technique [0002] Today, with the rapid development of microelectronics and material technology, a large number of new microelectronic devices with multiple functions and high integration have been developed continuously, and have shown unprecedented application prospects in various fields of people's daily life. However, the research on the power supply system matched with these microelectronic devices is relatively lagging behind. Generally speaking, the power supply of these microelectronic devices all comes from batteries directly or indirectly. Batteries have three insurmountable limitations. The first is the large size and heavy weight, which makes it difficult to miniaturize the entire electronic system; the secon...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H02N1/04
Inventor 王中林朱光潘曹峰
Owner BEIJING INST OF NANOENERGY & NANOSYST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap