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Indium gallium zinc oxide as well as preparation method and application thereof

A technology of indium gallium zinc oxide and indium gallium oxide, which is applied to the production of indium gallium zinc oxide targets, the composition of indium gallium zinc oxide targets, and the field of indium gallium zinc oxide targets, can solve the problem of Problems such as abnormal discharge effect of IGZO target material, deterioration of IGZO film quality and characteristics, uneven mixing, etc., achieve the effect of simplifying production complexity, improving quality and reducing production cost

Active Publication Date: 2015-03-04
SOLAR APPLIED MATERIALS TECHNOLOGY CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the production of IGZO targets with multiple monolithic metals or their oxides requires complicated process steps, and during the manufacturing process, diindium trioxide or zinc gallium oxide may be formed due to the uneven mixing of monometallic oxides. (ZnGa 2 o 4 ) and other secondary phase compounds
However, these secondary phase compounds will cause abnormal discharge effects on the IGZO target during the sputtering process, and even deteriorate the quality and characteristics of the IGZO film

Method used

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  • Indium gallium zinc oxide as well as preparation method and application thereof
  • Indium gallium zinc oxide as well as preparation method and application thereof
  • Indium gallium zinc oxide as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Embodiment 1-making IGZO

[0048] 1. Fabrication of binary metal oxides

[0049] Metal indium and metal gallium with a purity above 4N (99.99%) are put into a nitric acid solution for acid dissolution to form an initial solution. Ammonium hydroxide aqueous solution is added dropwise into the starting solution to adjust the pH value of the starting solution to 6.5 or 7.5.

[0050] Afterwards, the starting solution was left to stand for 1 hour to perform an aging step, forming a binary metal-containing precipitate. Herein, the binary metal-containing precipitate is indium gallium hydroxide.

[0051] Next, the precipitate containing binary metals is filtered and washed several times to remove unnecessary impurities, and then placed in an oven at 90°C for drying, and after being ground into powder, it is kept at a constant temperature of 700°C Calcined for 1 hour to obtain indium gallium oxide powder.

[0052] Inductively coupled plasma-mass spectroscopy (ICP) was used ...

Embodiment 2

[0058] Example 2 - Making IGZO

[0059] Metal indium and metal gallium with a purity above 4N (99.99%) are put into a nitric acid solution for acid dissolution to form an initial solution containing binary metal oxides. Afterwards, excessive zinc monoxide is added, and ammonium hydroxide aqueous solution is added dropwise to adjust the pH value of the solution to 6-8. When the pH value is adjusted to an appropriate range, indium ions, gallium ions and zinc ions in the initial solution will produce coprecipitation reactions.

[0060] Afterwards, the starting solution was aged for 1 hour to obtain a precipitate containing indium, gallium and zinc. Here, the precipitate containing indium, gallium and zinc is a precipitate of indium gallium zinc hydroxide.

[0061] Next, the precipitate of indium gallium zinc hydroxide is filtered and washed many times to remove unnecessary impurities, then placed in an oven at 90°C for drying, and then ground into powder, at a constant temperat...

Embodiment 3

[0063] Example 3 - making IGZO target

[0064] Use the IGZO powder prepared in Example 1 or Example 2, and ball mill it to less than 0.3 μm, and then mold it by cold isostatic pressing or slip casting to obtain a green embryo. Afterwards, the green embryo is degreased and sintered at a temperature of 1480° C. for 10 hours to obtain an IGZO target with a relative density greater than 95%.

[0065] Through the production method described in Example 1 or Example 2, high-purity InGaZnO with an atomic ratio close to 1:1:1 can be successfully prepared 4 powder.

[0066] see Figure 5 As shown, its XRD absorption peak is InGaZnO 4 characteristic peaks, but no ZnGa 2 o 4 The characteristic peaks show that the IGZO target with uniform composition can indeed be prepared by using the manufacturing method described in the present invention.

[0067]Accordingly, the present invention uses uniform binary metal oxide or IGZO powder as the raw material for making IGZO targets, which can...

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Abstract

The invention provides a preparation method of an indium gallium zinc oxide. The preparation method comprises the following steps of: firstly mixing raw materials containing indium, gallium and zinc, and then drying, carrying out calcination and the like to prepare the indium gallium zinc oxide with evenness and high purity. In addition, the invention also provides a component for preparing an indium gallium zinc oxide target material; the component is a mixture containing multielement metallic oxides, especially comprises the indium gallium zinc oxide prepared by using the preparation method of the invention. Furthermore, the invention also provides a method for preparing the indium gallium zinc oxide target material by using the indium gallium zinc oxide and a finished product thereof, the indium gallium zinc oxide target material mainly contains InGaZnO4, but does not contain ZnGa2O4. According to the invention, the IGZO is taken as a raw material for preparing IGZO target material, so that the uneven mixing of the raw materials is reduced, and the IGZO target material with high quality and relative density is prepared.

Description

technical field [0001] The invention relates to a method for preparing indium-gallium-zinc oxide (IGZO) and a composition for making an indium-gallium-zinc oxide target. In addition, the present invention also relates to a method for manufacturing an indium gallium zinc oxide target, which can be prepared using the aforementioned composition. Furthermore, the present invention relates to an InGaZn oxide target material prepared by the aforementioned manufacturing method. Background technique [0002] Indium-gallium-zinc oxide (IGZO) is a ternary metal oxide semiconductor material. Due to its advantages of high light transmittance and high carrier concentration, it is suitable for making large-scale and high-density resolution monitor. [0003] Generally speaking, indium-gallium-zinc oxide thin film (IGZO thin film) is mostly sputtered using indium-gallium-zinc oxide target (IGZO target) Formed by deposition. Among them, the IGZO target can be passed through indium trioxi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08
Inventor 张育纶林弘巾林婉华苏百樱王圣棻
Owner SOLAR APPLIED MATERIALS TECHNOLOGY CORPORATION
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