Method for preparing zone-melting silicon materials by using zone continuous casting process

A casting method and technology of preparation area, applied in the field of crystal growth, can solve problems such as unparalleled crystal quality advantages

Inactive Publication Date: 2013-10-30
丁欣
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Problems solved by technology

However, compared with other crystal growth methods, the zone melting method can provide silicon

Method used

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  • Method for preparing zone-melting silicon materials by using zone continuous casting process
  • Method for preparing zone-melting silicon materials by using zone continuous casting process

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Embodiment Construction

[0012] Such as figure 1 device shown. Ordinary primary reduced silicon rods removed from the reduction furnace (annealing the silicon rods before use is recommended to eliminate internal stress) are clamped on (5) the upper platform of the silicon rods (6) under the silicon rods after the heads of both ends are cut off between platforms. (4) The crucible is made of copper, molybdenum and other metals or ceramics, and the built-in water cooling circuit heats the molten silicon through the induction coil.

[0013] When casting crystals, (2) The melting zone of molten silicon can be cast from the top of the silicon rod from top to bottom, or from the bottom to the top.

[0014] When casting the crystal, (4) the water-cooled crucible and the heater can be fixed, and the silicon rod moves up and down for casting. The silicon rods can also be relatively fixed, and the (4) water-cooled crucible and heater can be moved for casting. No matter which physical movement method is used,...

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Abstract

The invention relates to a zone melting method, namely a crystal growth method. The zone melting method is one crystal growth method and is also known as a floating zone melting (FZ) method. The zone smelting method is used for obtaining single crystals of semiconductors such as silicon-germanium and gallium arsenide. Compared with other crystal growth methods, the zone melting method has the disadvantages that only columnar raw material polycrystalline silicon produced by a siemens reduction furnace through a special technology can be used, and only limited factories provide extremely few zone-melting polycrystalline silicon materials around the world, so that the zone melting method cannot be popularized like other crystal growth methods. But compared with other crystal growth methods, the zone melting method has the advantages that silicon single crystals with extremely low pollution can be supplied, and the advantage in the crystalline quality is beyond comparison. The method provided by the invention has the advantages that the zone continuous casting process is used, and common siemens reduction silicon materials are used for preparing the zone-smelting silicon materials, so that the sources of the zone-smelting silicon materials are widened, the manufacturing cost is reduced, and the zone-melting crystals with high quality are popularized and applied in industries.

Description

Technical field: [0001] The invention relates to the field of crystal growth Background technique: [0002] The zone melting (FZ) method refers to a method of crystal growth, also known as the suspension zone melting method, which is used to obtain single crystals of semiconductors such as silicon germanium and gallium arsenide. The zone melting method uses thermal energy to create a melting zone at one end of the semiconductor bar, and then welds the single crystal seed. Adjust the temperature so that the melting zone slowly moves to the other end of the rod, through the entire rod, and grows into a single crystal with the same crystal orientation as the seed crystal. [0003] Compared with other crystal growth methods, zone melting growth can only use columnar raw material polysilicon produced by Siemens reduction furnace through a special process, so that the external dimensions and internal stress can meet the requirements of zone melting growth. Generally speaking, ev...

Claims

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Application Information

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IPC IPC(8): C30B13/00C30B29/06B22D11/16
Inventor 丁欣
Owner 丁欣
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