Semiconductor device and method of forming the same

Abstract

The invention relates to a semiconductor device and a forming method thereof. The device comprises a substrate, a transistor, a first interlayer dielectric layer, a first conducting plug, a second conducting plug, a first interconnecting wire, a second interconnecting wire, a second interlayer dielectric layer, a third conducting plug and a third interconnecting wire, wherein the transistor is located on the substrate and comprises a grid electrode, a source electrode and a drain electrode; the first interlayer dielectric layer is located on the substrate and the transistor; the first conducting plug and the second conducting plug are located in the first interlayer dielectric layer; the first interconnecting wire and the second interconnecting wire are located on the first interlayer dielectric layer and electrically connected with the first conducting plug and the second conducting plug respectively; the second interlayer dielectric layer is located on the first interlayer dielectric layer, the first interconnecting wire and the second interconnecting wire; the third conducting plug is located in the first interlayer dielectric layer and the second interlayer dielectric layer; the third interconnecting wire is located on the second interlayer dielectric layer and electrically connected with the third conducting plug; and one of the first conducting plug, the second conducting plug and the third conducting plug is electrically connected with the source electrode, one of the first conducting plug, the second conducting plug and the third conducting plug is electrically connected with the drain electrode, and one of the first conducting plug, the second conducting plug and the third conducting plug is electrically connected with the grid electrode. The device reduces stray capacitance between the interconnecting wires connected with the transistor and improves the device performance.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a semiconductor device and a forming method thereof. Background technique [0002] combine figure 1 and figure 2 As shown, the existing radio frequency (RF) circuit includes: a substrate 1; a transistor on the substrate 1, including: a gate 2, a source 3 and a drain 4; a first interlayer dielectric on the substrate 1 and the transistor Layer 5; the first conductive plug 7A, the second conductive plug 7B and the third conductive plug 7C located in the first interlayer dielectric layer 5, the first conductive plug 7A is electrically connected to the gate 2, and the second conductive plug The plug 7B is electrically connected to the source 3, and the third conductive plug 7C is electrically connected to the drain 4; the first interconnection line 6A, the second interconnection line 6B and the third interconnection line on the first interlayer dielectric layer 5...

AI Technical Summary

Problems solved by technology

[0004] However, in practical applications, it is found that there is a serious leakage of radio frequency signals in the radio frequency circuit, which reduces the performance of the radio frequency circuit

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