Recovery circuit and recovery method for positive bias temperature instability

Abstract

Provided are a restoring circuit and restoring method against positive bias temperature instability. The restoring circuit comprises a to-be-restored N-channel metal oxide semiconductor (NMOS) transistor and a restoring unit. A grid electrode of the to-be-restored NMOS transistor is connected with the restoring unit. According to the restoring unit, a grid electrode of a switch transistor is connected with a signal input end, a drain electrode of the switch transistor is connected with a first voltage end, the first voltage end provides a negative first working voltage, a substrate of the switch transistor is connected with a second voltage end, a source electrode of the switch transistor is connected with one end of a second resistor, the other end of the second resistor is connected with a signal output end, one end of a first resistor is connected with a signal input end, and the other end of the first resistor is connected with the signal output end. Due to the fact that the voltage of the first voltage end is negative, by adjusting resistance values of the first resistor and the second resistor, grid electrode voltage applied to the to-be-restored NMOS transistor can be negative pressure, and good positive bias temperature instability (PBTI) characteristic restoration effect can be achieved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a recovery circuit and recovery method for positive bias temperature instability. Background technique [0002] As the integration level of semiconductor integrated circuits becomes higher and higher, the requirements for the performance of transistors are also increased, and therefore, the requirements for the reliability of transistors are also increased. In the CMOS process, when evaluating the reliability of the PMOS transistor, the negative bias temperature instability (NegativeBiasTemperatureInstability, NBTI) is a main evaluation factor. Negative bias temperature instability means that under the action of negative bias gate voltage and high temperature of the PMOS transistor, the hydrogen-silicon bond at the interface between the gate oxide layer of the PMOS transistor and the substrate is broken, forming interface defect charges, thereby A phenomenon that causes the thresho...

AI Technical Summary

Problems solved by technology

It can be clearly seen from the figure that the SiO 2 As the material of the gate dielectric layer, it is not easy to cause the threshold voltage to shift, and the use of HfO 2 High-K dielectric materials such as HfSiO are more likely to cause threshold voltage shifts as gate dielectric materials, and NMOS transistors using high-K / metal gate stack structures are more susceptible to positive bias temperature instability

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