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A method for preparing copper-aluminum-sulfur photoelectric thin film

An optoelectronic thin film, copper-aluminum-sulfur technology, which is used in circuits, electrical components, and final product manufacturing, etc., can solve the problems of complex process routes and high preparation costs, and achieve the effects of low equipment requirements, low production costs, and high production efficiency.

Inactive Publication Date: 2015-12-02
SHANDONG JIANZHU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the low cost of raw materials, it is a very promising photoelectric thin film material, but the existing process route is complicated and the production cost is high, so it is also necessary to explore a low-cost preparation process

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] a. Cleaning of the substrate: The silicon substrate (size 2mm×2mm) was cleaned as described above.

[0031] b. Mix 1 part of CuCl 2 2H 2 O, 2.200 parts Al(NO 3 ) 3 9H 2 O into a glass bottle, add 39.789 parts of deionized water and 26.526 parts of ammonia water, and use ultrasonic vibration for more than 30 minutes to mix the substances in the solution evenly.

[0032] c. Drop the above solution onto the silicon substrate placed on the homogenizer, then start the homogenizer, rotate the homogenizer at 200 rpm for 5 seconds, and rotate at 3000 rpm for 15 seconds, so that the dripped solution is coated After the cloth is evenly distributed, the substrate is dried, and then the above-mentioned solution is repeatedly dripped and spin-coated, and then dried again. This is repeated 10 times, and a precursor thin film sample with a certain thickness is obtained on the substrate.

[0033]d. Put the precursor film sample obtained by the above process into a sealable contain...

Embodiment 2

[0036] a. Cleaning of the substrate: The glass substrate (size 2mm×2mm) was cleaned as described above.

[0037] b. Mix 1 part of CuCl 2 2H 2 O, 2.200 parts Al(NO 3 ) 3 9H 2 Put O into a glass bottle, 39.789 parts of ethylene glycol, and use ultrasonic vibration for more than 30 minutes to mix the substances in the solution evenly.

[0038] c. Drop the above solution onto the glass substrate placed on the homogenizer, and then start the homogenizer. The homogenizer rotates at 500 rpm for 9 seconds, so that the dripped solution is evenly coated, and then the substrate is baked. After drying, the aforementioned solution was dripped and spin-coated again and then dried again, and this was repeated 10 times, thus obtaining a precursor thin film sample with a certain thickness on the glass substrate.

[0039] d. Put the precursor thin film sample obtained by the above process into a sealable container, and put 1.449 parts of hydrazine hydrate and 0.375 parts of sublimated sulf...

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Abstract

The invention relates to a method for preparing a copper-aluminum-sulfur film, and belongs to the technical field of preparation of photoelectric films. The method comprises the following steps of: firstly cleaning a substrate; then placing CuCl2.2H2O and Al(NO3)3.9H2O into a solvent, and applying a spincoating method to obtain a precursor film on the substrate; drying the precursor film, and placing the precursor film into a closable container filled with hydrazine hydrate and sublimed sulfur, wherein a precursor film sample is not contacted with the hydrazine hydrate and the sublimed sulfur; finally drying the sample to obtain the copper-aluminum-sulfur photoelectric film. The method disclosed by the invention has the advantages of no need of high-temperature high-vacuum condition, low requirement on instruments and equipment, low production cost, high production efficiency and easiness for operation. The obtained copper-aluminum-sulfur photoelectric film has better continuity and uniformity. The new process can be used for easily controlling the components and structure of a target product and provides the preparation method which is low in cost and can realize industrialization for preparing the high-property copper-aluminum-sulfur photoelectric film.

Description

technical field [0001] The invention belongs to the technical field of photoelectric thin film preparation, and in particular relates to a method for preparing a copper-aluminum-sulfur photoelectric thin film. Background technique [0002] With the development of society and economy, my country's total energy consumption has increased sharply, and energy shortages and pollution caused by energy consumption have become prominent problems in domestic social development. Harmonious society is of great significance. In order to make full use of solar energy, which is a clean, safe and environmentally friendly renewable resource, the research and development of optoelectronic materials has been paid more and more attention in recent years. [0003] Copper aluminum sulfur is widely used in photovoltaic detectors, solar cells, and light-emitting diodes. Copper-aluminum-sulfur-based thin-film solar cells are one of the most popular optical materials currently researched, because th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/22H01L31/18
CPCY02P70/50
Inventor 李静刘科高高稳成石磊禤畅
Owner SHANDONG JIANZHU UNIV
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