semiconductor structure

Abstract

The present invention relates to a semiconductor structure, which comprises: a first semiconductor layer, an active layer and a second semiconductor layer stacked in sequence; a first optically symmetrical layer arranged on the second semiconductor layer away from the first semiconductor layer A metal plasma generation layer is disposed on the surface of the first optically symmetrical layer away from the first semiconductor layer; a second optically symmetrical layer is disposed on the surface of the metal plasma generation layer away from the first semiconductor layer.

Description

technical field [0001] The present invention relates to a semiconductor structure. Background technique [0002] High-efficiency blue, green, and white light-emitting diodes made of gallium nitride semiconductor materials have remarkable features such as long life, energy saving, and environmental protection. They have been widely used in large-screen color displays, automotive lighting, traffic signals, multimedia displays, and optical communications. And other fields, especially in the field of lighting has broad development potential. [0003] A traditional semiconductor structure usually includes a substrate, an N-type semiconductor layer, a P-type semiconductor layer, an active layer arranged between the N-type semiconductor layer and the P-type semiconductor layer, and a P-type electrode (usually transparent electrode) and the N-type electrode disposed on the N-type semiconductor layer. The N-type semiconductor layer, the active layer and the P-type semiconductor lay...

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Problems solved by technology

[0004] However, since the refractive index of the semiconductor is greater than that of air, the near-field evanescent light waves (waves with an attenuation distance less than 20 nanometers) from the active layer cannot exit due to rapid attenuation during the outward radiation process, so they are limited to The interior of the semiconductor structure, until it is completely absorbed by the material in the semiconductor structure, affects the light extraction rate of the semiconductor structure

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