Unlock instant, AI-driven research and patent intelligence for your innovation.

Method, apparatus and system for data sensing

A technology of data and soft data, applied in the field of semiconductor memory devices, capable of solving problems such as error sensing of memory cells

Active Publication Date: 2016-11-30
MICRON TECH INC
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, a previously used sensing voltage may result in false sensing of a memory cell when used during a subsequent sensing operation.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method, apparatus and system for data sensing
  • Method, apparatus and system for data sensing
  • Method, apparatus and system for data sensing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010] The present invention includes methods, devices and systems for data sensing. One such method includes: performing several sensing operations on several memory cells using several different sensing signals; determining a number of memory cells that changed a sensed state between sensing operations; The determined number of memory cells that change sensed states between determines whether to output first data associated with the number of cells or to output second data associated with the number of cells.

[0011] One or more embodiments may include: determining an amount to change state between one of the number of sensing operations that changed state and another of the number of sensing operations; and determining, in response to the determined amount being less than a threshold, Instead, first data is output, wherein the first data corresponds to data sensed during one of the sensing operations or data sensed during the other of the sensing operations. One or more e...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention includes methods and apparatus for data sensing. One such method includes: performing a number of consecutive sensing operations on a number of memory cells using a number of different sensing voltages; quantity; and determining whether to output hard data corresponding to one of the number of consecutive sensing operations based at least in part on the determined number of the number of memory cells that changed state between consecutive sensing operations.

Description

technical field [0001] The present invention relates generally to semiconductor memory devices, methods and systems, and more particularly to methods, devices and systems for data sensing. Background technique [0002] Memory devices are often provided as internal semiconductor integrated circuits in computers or other electronic devices and / or as external removable devices. There are many different types of memory, including Random Access Memory (RAM), Read Only Memory (ROM), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SDRAM), Phase Change Random Access Memory (PCRAM) ) and flash memory etc. [0003] Flash memory devices are used in a wide range of electronic applications as both volatile and non-volatile memory. Flash memory devices typically use one-transistor memory cells that allow for high memory density, high reliability, and low power consumption. Applications for flash memory include flash memory in solid state drives (SSDs), pe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/22G11C7/10G11C29/42
Inventor 马克·A·赫尔姆乌黛·钱德拉塞卡尔
Owner MICRON TECH INC