Method for measuring vertical double-diffusion MOSFET

Abstract

The invention discloses a method for measuring a vertical double-diffusion MOSFET. The method includes the step 1, applying measuring voltage to the transistor and injecting sampling current to the drain electrode of the transistor to obtain first voltage between the drain electrode of the transistor and the source electrode of the transistor, step 2, injecting measuring current and heating the transistor under given measuring time, step 3, injecting the sampling current to obtain second voltage between the drain electrode of the transistor and the source electrode of the transistor, and step 4, computing a different value between the first voltage and the second voltage and computing the heat resistance of the transistor according to the different value between the first voltage and the second voltage. Measurement and evaluation on the performance of the VDMOSFET can be carried out by measuring the voltage change quantity between the drain electrode and the source electrode of the VDMOSFET under working states. The measuring method can meet use demands and evaluate and judge the whole performance of the VDMOSFET more comprehensively and more effectively.

Description

Technical field [0001] The invention relates to the technical field of electronic device testing, in particular to a testing method of a vertical double diffused metal oxide semiconductor field effect transistor. Background technique [0002] With more and more specifications and types of vertical double diffused metal oxide semiconductor field effect transistors (VDMOSFETs for short), the use of them has become more and more extensive, circuit design has become more and more complex, and the quality and performance requirements of VDMOSFETs have also increased. The more stringent. In this complicated development process, some new judgment methods, as well as new concepts and indicators, will be introduced on the basis of partial retention of the original concepts in the analysis and judgment of the characteristics of the VDMOSFET. [0003] Generally considered in different use requirements, mainly measure the reverse breakdown voltage, threshold voltage, on-state resistance RDON ...

AI Technical Summary

Problems solved by technology

[0004] The current test method is the inherent test method of VDMOSFET. The test conditions and scope are summarized for almost all conventional VDMOSFETs, but the performance or excellent degree of VDMOSFET has not been measured and evaluated.

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