Manufacturing method for light-emitting diode

Abstract

The invention provides a manufacturing method for a light-emitting diode. An N-GaN layer, a quantum well layer, a P-GaN layer and a light emitting epitaxial layer of a transparent conducting layer are formed on a sapphire substrate; light emitting epitaxial arrays are defined, etching and scribing are carried out according to the light emitting epitaxial arrays, a plurality of scribing channels reaching the N-GaN layer and V-type scribing grooves stretching from all the scribing channels to a preset depth of a semiconductor substrate are formed; electrodes are prepared, and the sapphire substrate is thinned; lastly, a slice splitting cutter is used for carrying out slice splitting on all the light emitting epitaxial arrays to obtain a light emitting inclined plane, wherein transverse deflection which is 1-150 microns is reserved between the compression position of the slice splitting cutter and the bottoms of the V-type scribing grooves. According to the manufacturing method for the light-emitting diode, slice splitting is carried out in the mode that the transverse deflection is reserved between the compression position of the slice splitting cutter and the scribing grooves, the light emitting inclined plane is obtained in the sapphire substrate, the light-emitting area is increased effectively, and the light-emitting efficiency of the light-emitting diode is improved. The manufacturing method for the light-emitting diode is capable of improving the light-emitting efficiency of the light-emitting diode with low cost, simple in technology and suitable for industrial production.

Description

technical field [0001] The invention belongs to the field of semiconductor lighting, in particular to a method for manufacturing a light emitting diode. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes are made of III-IV compounds, such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) and other semiconductors, and its core is a P...

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for manufacturing a light-emitting diode, which is us

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