A Method for Eliminating the Influence of the System Frequency Response of the Photocarrier Radiation Technology Semiconductor Material Characteristic Measurement Device
A technology for photocarrier radiation and material properties, which is applied in the field of eliminating the influence of the system frequency response of the photocarrier radiation technology semiconductor material property measurement device, and can solve the problem of reducing the accuracy and reliability of the measurement of semiconductor material property parameters, and future problems. Accurately and effectively eliminate problems such as eliminating the influence of semiconductor material characteristic measurement, eliminating the influence of system frequency response, and improving measurement accuracy.
Inactive Publication Date: 2016-04-13
TENGZHOU TENGHAI ANALYTICAL INSTR
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Problems solved by technology
In fact, instruments such as detectors and lock-in amplifiers have different frequency response functions for different wavelengths of light, so that the influence of the system frequency response has not been accurately and effectively eliminated, thereby reducing the accuracy and reliability of the measurement of semiconductor material characteristic parameters
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[0032] Embodiments of the present invention can be more thoroughly understood from the following detailed description, which should be read in conjunction with the accompanying drawings. However, it should be noted that the specific embodiment only provides a description of the measurement of some characteristic parameters of the semiconductor material, but the present invention is not limited to the specific embodiment, and various methods can be performed without departing from the spirit and scope of the present invention Variety.
[0033] In the photocarrier radiation technology measurement device, if the influence of the frequency response of the measurement system such as lasers, detectors and lock-in amplifiers cannot be effectively eliminated, the measurement results will deviate from the true value, thereby reducing the measurement accuracy of semiconductor material properties. . The real signal of the sample after considering the frequency response of the system is:...
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Abstract
The invention discloses a method used for eliminating system frequency response influences on photo-carrier radiometry technology semi conducting material characteristic measuring equipment. The method is based on infrared radiation which is generated by a semi conducting material after absorption of focused excitation beams processed by strength periodic modulation; characteristic parameters of the semi conducting material are measured by collecting and measuring photo-carrier radiation signals; a relationship curve of the photo-carrier radiation signals and modulation frequency is obtained by changing the modulation frequency of the strength of the excitation beams; a relationship curve of the photo-carrier radiation signals and the modulation frequency under different excitation beam spot sizes is obtained by changing the space between a focusing lens and a sample; and frequency response function of the measuring equipment is obtained, and the influences of the frequency response function on semi conducting material characteristic measurement is eliminated by analyzing the relationship curve of the photo-carrier radiation signals and the modulation frequency under different excitation beam spot sizes. The method is capable of solving a problem that in traditional method measurement accuracy is influenced by relatively high measuring error, and increasing measuring accuracy of measurement on semi conducting material characteristic parameters.
Description
technical field [0001] The invention relates to eliminating the influence of the system frequency response in the process of measuring the characteristics of semiconductor materials, in particular to a method for eliminating the influence of the system frequency response of a device for measuring the characteristics of semiconductor materials using photocarrier radiation technology. Background technique [0002] With the development of semiconductor raw materials in the direction of large diameter and low defects, the integration degree of microelectronic devices is continuously improved, which puts forward higher requirements for the processing technology and performance testing of materials. In order to ensure that materials can be used in devices and improve device stability and yield, accurate and rapid online monitoring and non-destructive characterization of material properties are required in the material processing process. A photocarrier radiation (PCR: Photo-Carrie...
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IPC IPC(8): G01N21/63
Inventor 李斌成王谦
Owner TENGZHOU TENGHAI ANALYTICAL INSTR