Pixel array, image sensor having the same, and method for compensating local dark current

Abstract

A pixel array for an image sensor is provided. The pixel array includes a dark pixel which is configured to detect a local dark current in an active pixel block. The dark pixel is distinguished from an optical black pixel block which is arranged around the active pixel block and is configured to detect a global dark current. The pixel array is configured to compensate for dark shading, which is not compensated through global dark current compensation, using the local dark current output from the dark pixel which is arranged within the active pixel block.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2012-0076611 filed with the Korean Intellectual Property Office on Jul. 13, 2012, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0002] Exemplary embodiments relate to an image sensor. In particular, the exemplary embodiments relate to a complementary metal compensation for dark shading (i.e., a difference in dark current locally occurring within a pixel array) by including dark pixels for detecting local dark current in an active pixel block. An oxide semiconductor (CMOS) image sensor and method thereof. Background technique [0003] A sensor including a pixel array that senses an effective physical quantity such as light intensity, temperature, mass, or time and outputs an electrical signal based on the sensing result is used in various fields. In particular, image sensors that measure images of captured objects are used in various fields. [0004...

AI Technical Summary

Problems solved by technology

However, in the prior art, partially occluded pixels do not support dark signal measurement

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