Pixel array, image sensor having the same, and method for compensating local dark current

An image sensor and pixel array technology, applied in solid image signal generators, image communication, image signal generators, etc., can solve problems such as not supporting dark signal measurement

Active Publication Date: 2014-01-29
SAMSUNG ELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the prior art, partially occlu...

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  • Pixel array, image sensor having the same, and method for compensating local dark current
  • Pixel array, image sensor having the same, and method for compensating local dark current
  • Pixel array, image sensor having the same, and method for compensating local dark current

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Embodiment Construction

[0034] figure 1 is a diagram of a pixel array 10 included in an image sensor according to some embodiments of the exemplary embodiments. Pixel array 10 includes active pixel blocks 11 , column optical black body (OB) pixel blocks 12a and 12b, and frame OB pixel blocks 13a and 13b.

[0035] The active pixel block 11 includes at least one dark pixel 11a that detects or extracts a local dark current and a plurality of active pixels 11b that output image data. At least one dark pixel 11 a is located in the active pixel block 11 and is used to detect a local dark current generated in the active pixel block 11 .

[0036] The column OB pixel blocks 12a and 12b are located on the left and right sides of the active pixel block 11 respectively and are used to detect the global dark current existing between the columns. The frame OB pixel blocks 13a and 13b are used to detect the global dark current existing between frames. In other words, column OB pixel blocks 12 a and 12 b and fram...

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Abstract

A pixel array for an image sensor is provided. The pixel array includes a dark pixel which is configured to detect a local dark current in an active pixel block. The dark pixel is distinguished from an optical black pixel block which is arranged around the active pixel block and is configured to detect a global dark current. The pixel array is configured to compensate for dark shading, which is not compensated through global dark current compensation, using the local dark current output from the dark pixel which is arranged within the active pixel block.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2012-0076611 filed with the Korean Intellectual Property Office on Jul. 13, 2012, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0002] Exemplary embodiments relate to an image sensor. In particular, the exemplary embodiments relate to a complementary metal compensation for dark shading (i.e., a difference in dark current locally occurring within a pixel array) by including dark pixels for detecting local dark current in an active pixel block. An oxide semiconductor (CMOS) image sensor and method thereof. Background technique [0003] A sensor including a pixel array that senses an effective physical quantity such as light intensity, temperature, mass, or time and outputs an electrical signal based on the sensing result is used in various fields. In particular, image sensors that measure images of captured objects are used in various fields. [0004...

Claims

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Application Information

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IPC IPC(8): H04N5/361H04N5/374H04N5/378
CPCH04N5/23212H04N5/361H01L27/14627H01L27/14603H04N5/3745H04N9/045H01L27/14623H01L27/14645H01L27/14609H01L27/14601H04N23/67H04N23/672H04N25/63H04N25/633H04N25/704H04N25/77H04N23/10H04N23/843H04N25/134
Inventor 赵镛性李东宰金泰瓒
Owner SAMSUNG ELECTRONICS CO LTD
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