Management method and device for nonvolatile memory (NVM)

A non-volatile, management method technology, applied in the direction of memory address/allocation/relocation, etc., can solve the problems of reducing NVM lifespan and low data writing efficiency.

Inactive Publication Date: 2014-02-05
KTMICRO ELECTRONICS
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, using this method, it is necessary to write 4 times to update data safely, resulting in low efficiency of writing data
Moreover, the backup area needs to be updated every time the data is updated, and the backup area is fixed. Frequent operations on the fixed area will greatly reduce the life of NVM

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Management method and device for nonvolatile memory (NVM)
  • Management method and device for nonvolatile memory (NVM)
  • Management method and device for nonvolatile memory (NVM)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0028] NVM management method embodiment

[0029] Such as figure 1 As shown, it is a schematic structural diagram of NVM in the embodiment of the NVM management method of the present invention. The NVM includes more than one block: block 1, block 2 ... block n, n is a natural number greater than or equal to 1, and each A block includes a plurality of pages: page 1, page 2...page m and 1 alternate page, m is a natural number greater than or equal to 2, each page includes a data area and a control information area, and the data area stores data and control information The area saves the page address, page ID and check code. Wherein, the page address is a logical page address, the page identifier is used to identify the sequence of the write operation whose target page address is the page address, and the check code is calculated according to the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a management method and device for a nonvolatile memory (NVM). The method comprises the following steps: when write operation is performed according to a destination page address, a destination block is inquired to obtain two pages with the same page address and a page corresponding to the destination page address, one of the two pages is selected as an alternating page according to check codes and page identifications of the two pages, and new page data is obtained according to page data of the page corresponding to the destination page address and is written into the alternating page; when read operation is performed according to the destination page address, the destination block is inquired to obtain pages corresponding to the destination page address, when the destination page address corresponds to two pages, one of the two pages is selected as an effective page according to check codes and page identifications of the two pages, and data in the effective page is read. The management method and device can improve the efficiency of data writing and prolong the service life of the NVM.

Description

technical field [0001] The present invention relates to the field of memory, in particular to a method and device for managing non-volatile memory. Background technique [0002] With the rapid development of society today, the use of nonvolatile memory (Nonvolatile memory, referred to as: NVM) has been seen everywhere and is closely related to life. Common NVMs include Electrically Erasable Programmable Read-Only Memory (Electrically Erasable Programmable Read- Only Memory, referred to as: EEPROM) and flash memory (Flash Memory, referred to as: FLASH). For example, NVM is widely used in smart cards used in various fields such as public transportation, social security, banking, electricity, and identification. Therefore, it is particularly important to ensure efficient and safe storage of data in NVM. During the working process of the smart card, if there is a power failure or other unpredictable errors, resulting in the abnormal termination of the smart card erasure or wri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02
Inventor 冯强王俊杰孙马秋
Owner KTMICRO ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products